GaAs based InAs/GaSb superlattice near infrared photodetector and manufacturing method thereof

Abstract

The invention discloses a GaAs based InAs / GaSb superlattice 1-3 micron band near infrared photodetector, which consists of the following components from bottom to top: a GaAs substrate, a GaAs buffer layer, an AlSb nucleating layer, a GaSb lower buffer layer, an AlSb / GaSb superlattice layer, a GaSb upper buffer layer, an InAs / GaSb superlattice layer, a GaSb cover layer and a titanium alloy electrode. The invention also discloses a method for manufacturing the GaAs based InAs / GaSb superlattice 1-3 micron band near infrared photodetector at the same time. By using the GaAs based InAs / GaSb superlattice 1-3 micron band near infrared photodetector and the method, a high-quality GaSb buffer layer is grown on the GaAs substrate, and the InAs / GaSb superlattice layer is grown on the GaSb buffer layer, thus an infrared photodetector with low dark current and low cost can be manufactured.

Description

technical field [0001] The invention relates to the field of infrared photodetectors in semiconductor technology, in particular to a GaAs-based InAs / GaSb superlattice infrared photodetector with a wavelength of 1 to 3 microns and a manufacturing method thereof. Background technique [0002] With the advancement of science and technology, infrared detectors with military use as the core have gradually developed. Atmospheric monitoring and other military and civilian fields have a wide range of applications. [0003] However, the most commonly used silicon-doped detectors, InSb, QWIP, MCT and other infrared detectors are all required to work at low temperature, require special refrigeration equipment, and are expensive, so their applications are limited. The InAs / GaSb infrared detector is due to the particularity of its materials, for example: the high effective mass of electrons and holes can effectively reduce the tunneling current and increase the density of states; the en...

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Problems solved by technology

[0004] Although InAs / GaSb superlattice growth can obtain less defect density on the matched GaSb substrate, the GaSb substrate has a series of disadvantages such as expensive, no semi-insulating substrate, and difficult to integrate with the readout circuit. Therefore, growing a high-quality GaSb buffer layer on a cheap GaAs substrate and then growing an InAs / GaSb superlattice to make an infrared detector has broad application prospects

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