Layout parameter extraction method of annular gate device

Abstract

The invention provides a layout parameter extraction method of an annular gate device, can accurately extract the breadth length ratio of the device by segmenting an annular gate and calculating the equivalent breadth length ratio of each segment respectively, and can also accurately extract the perimeters of a source region and a drain region of an annular gate transistor by changing the perimeter extraction rules of the source region and the drain region. The layout extraction rule customized by the invention can ensure the accuracy of extracted parameters and satisfy the requirement of model design of the annular gate device, thus solving the problem that the layout parameter of the annular gate device is difficult to be extracted accurately. For different processes and extraction tools, the method has portability and inheritance.

Description

technical field [0001] The invention relates to a layout parameter extraction method, in particular to a layout parameter extraction method of a ring gate device. Background technique [0002] In response to the demand for integrated circuits in electronic systems in radiation environments, a large number of anti-radiation hardening technologies have emerged one after another. Among them, transistors with ring gate structures are very effective in suppressing leakage caused by total dose radiation effects, and are the most commonly used anti-radiation hardening technologies. One of the techniques. When designing an integrated circuit, it is usually necessary to extract parameters from the designed layout. This has two main purposes: one is to extract circuit information from the layout, mainly the device type and its width-to-length ratio, in order to compare with the previously designed circuit. Comparison (LVS) to ensure the correctness of the layout design; the other is ...

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Problems solved by technology

The transistor layout of the ring gate structure is as follows image 3 As shown, it includes a gate region 31, a source region 32 and a drain region 33, but its gate region has an irregular shape. For this special layout structure of a ring gate device, if the above-mentioned conventional layout parameter extraction rules are used, it is difficult to extract the device layout Relevant parameters, even if they are extracted, the extracted parameters are not accurate and cannot be used as the basis for design, and commercial process factories generally do not provide parameter extraction rules for special structural layouts, so it is necessary to establish a layout for ring gate devices Parameter extraction method

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