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Controlled equivalent resistance module

A technology of equivalent resistance and transmission module, applied in electrical components, logic circuits, pulse technology, etc., can solve the problems of MOS resistance process error body effect and inaccurate equivalent resistance control.

Active Publication Date: 2009-09-16
苏州日月成科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The invention provides a controlled equivalent resistance module to generate an equivalent MOS resistance controlled by input voltage or input current, which solves the problem that the equivalent resistance value of the existing MOS resistance is affected by process error and body effect, and the equivalent resistance The technical problem of imprecise value control

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0071] The controlled equivalent resistance module of this embodiment is such as figure 1 shown.

[0072] The first input circuit contains the first control input current (I IN1 ) and for applying the first control input voltage (V IN1 ) into the third MOS transistor M of the current signal C1 . The third MOS tube M C1 Working in the saturation region, its gate receives the first external control input voltage (V IN1 ).

[0073] The second input circuit contains a second control input current (I IN2 ) and for applying the second control input voltage (V IN2 ) into the fourth MOS transistor M of the current signal C2 . The third MOS tube M C2 Working in the saturation region, its gate receives an external second control input voltage (V IN2 ).

[0074] The output currents of the first input circuit and the second input circuit flow into the two input terminals of the current transmission module, and the current transmission module determines the transfer function f ...

Embodiment 2

[0079] The controlled equivalent resistance module of this embodiment is such as figure 2 shown.

[0080] On the basis of Embodiment 1, a constant current source I is added to the first input circuit and the second input circuit respectively C1 and I C2

Embodiment 3

[0082] The controlled equivalent resistance module of this embodiment is such as image 3 shown.

[0083] On the basis of Example 1, a constant current element I is added after the current transmission module CV C .

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Abstract

The invention provides a controlled equivalent resistance module, comprising an MOS tube MR for producing controlled resistance, a MOS tube MS for producing equivalent resistance value control voltage, an operation amplifier A1 for locking the source end voltage of the MOS tube MR and the MOS tube MS, a current transmitting module CV for adjusting the direction and size of the input current signal, a MOS tube MC for converting the input voltage signal into the current signal, and a current source IC for limiting the maximal resistance value. The equivalent resistance module can change the equivalent MOS resistance under the control of the input voltage or the input current, solving the technical problem that the equivalent resistance of the present MOS resistance is influenced by the process error, the bulk effect and the like, so that the equivalent resistance can not be controlled accurately.

Description

technical field [0001] The invention relates to a controlled equivalent resistance module, in particular to an equivalent resistance circuit module whose resistance value is controlled by input current or input voltage in an analog integrated circuit. Background technique [0002] Precise and controlled resistors are required in analog integrated circuits for certain circuit functions, such as frequency compensation. In traditional circuits, MOS transistors operating in the deep linear region are usually used to generate such an equivalent resistance. However, in traditional circuits, the source terminal of the MOS transistor resistor is usually connected to a fixed potential for the generation of the bias voltage at the gate terminal. Moreover, both body effect and process error will cause changes in the threshold voltage of the MOS transistor, thereby affecting the equivalent resistance of the MOS resistor. These factors largely limit the use of MOS resistors in circuits...

Claims

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Application Information

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IPC IPC(8): H03K19/094
Inventor 何乐年王忆宁志华邵亚利
Owner 苏州日月成科技有限公司
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