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Method for preparing cubic silicon carbide ultrafine powder by using waste plastic at low temperature

A technology of cubic silicon carbide and ultrafine powder, applied in chemical instruments and methods, polycrystalline material growth, crystal growth, etc., to achieve the effect of environmentally friendly industrial production and easy industrial production

Inactive Publication Date: 2010-10-06
SHANDONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The main components of waste plastics are low-density polyethylene (LDPE), high-density polyethylene (HDPE) and polyethylene terephthalate (PET) plastic products account for the majority, and waste plastics are used in the preparation of cubic silicon carbide Exploitation has not been reported yet

Method used

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  • Method for preparing cubic silicon carbide ultrafine powder by using waste plastic at low temperature
  • Method for preparing cubic silicon carbide ultrafine powder by using waste plastic at low temperature
  • Method for preparing cubic silicon carbide ultrafine powder by using waste plastic at low temperature

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Embodiment Construction

[0015] Collect used plastic waste whose main components are high-density polyethylene (HDPE), low-density polyethylene (LDPE) or polyethylene terephthalate (PET), wash it with water and dry it naturally. Or dry at 60°C for 3 hours, and finally shred or mechanically pulverize for use.

[0016] A method for preparing cubic silicon carbide superfine powder at low temperature, the steps are as follows:

[0017] (1) Molar ratio (0.1-3): 1: (0.5-8): (0.2-3.2): ( 0.1-3) mixing, sealing in a stainless steel autoclave, placing the autoclave in a resistance furnace, and reacting for 10-30 hours at 350-500°C and 0.5-10MPa;

[0018] (2) The product obtained in step (1) is washed with alcohol, washed with water, and conventionally centrifuged, and dried to obtain a crude cubic silicon carbide containing a small amount of silicon powder and amorphous carbon, see figure 1 The X-ray diffraction spectrum.

[0019] (3) The product obtained in step (2) is refluxed with 70%wt perchloric acid o...

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Abstract

The invention relates to a method for preparing cubic silicon carbide ultrafine powder by using waste plastic at low temperature, which comprises the following steps: waste plastic is used as a carbon source to synthesize silicon carbide with silicon powder, sodium metal and magnesium metal powder are used as reducing agents, sulfur powder is used as an adjuvant, the mixture reacts for 10 to 30 hours under the condition of 0.5 to 10 MPa at the temperature of 350 to 500 DEG C in a high-pressure kettle, and the product of reaction is washed and purified to obtain the cubic silicon carbide ultrafine powder. The method can cheaply prepare 3C-SiC ultrafine powder with good crystal degree in a large scale at relatively lower temperature and enlarge the application of silicon carbide ceramics and relevant composite materials thereof; especially the method uses the waste plastic as the carbon source, thereby being beneficial to energy saving, consumption and cost of raw materials reducing andchanging the waste into a resource and controlling the environmental pollution.

Description

technical field [0001] The invention relates to the recycling of waste plastics and the preparation of cubic silicon carbide, in particular to a method for preparing cubic silicon carbide superfine powder at low temperature from waste plastics. Background technique [0002] Silicon carbide (SiC) has high thermal conductivity, oxidation resistance and chemical corrosion resistance. At the same time, it is a hard material and can be widely used as a reinforcing agent for ceramics, metals and polymer matrix composites. See Adv.Mater. , 2000, 12, 1186. 3C-SiC material has great application potential in microelectronic semiconductor devices due to its wide bandgap (2.3eV), high critical breakdown electric field, high thermal conductivity, and high stability. It is 21 As one of the important new functional semiconductor device materials in the century, many countries have invested a lot of money to conduct extensive and in-depth research on SiC. [0003] The traditional method of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/36C04B35/565C30B29/36
Inventor 钱逸泰鞠治成马小健庞巧莲邢政徐立强
Owner SHANDONG UNIV
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