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Semiconductor device and electronic device

A technology of semiconductors and devices, which is applied in the field of wireless communication equipment of high-frequency analog signal processing ICs, can solve problems such as lowering gain and unsatisfactory circuit components, and achieve the effects of reducing crosstalk, satisfying call performance, and ensuring operation

Inactive Publication Date: 2009-08-26
RENESAS TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in a high-speed communication system, the above-mentioned circuit components are not satisfactory from the viewpoint of gain reduction

Method used

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  • Semiconductor device and electronic device
  • Semiconductor device and electronic device
  • Semiconductor device and electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0159] Figure 14 A schematic plan view showing a high-frequency power module of another embodiment (Embodiment 2) of the present invention when a part of the sealing body is removed.

[0160] In Embodiment 1, the circuit part includes three low noise amplifiers (LNA) 24 as the specified circuit part 11 . In Embodiment 2, in addition to the above-mentioned circuit components, in the VCO, the RFVCO 44 that handles high frequencies is used as a specified circuit component. Therefore, all the ground electrode terminals 9 of the RFVCO 44 are connected to the lead wire (ground lead) 7 by the wire 10, while the ground electrode terminals 9 are not connected to the tab 4 by the wire.

[0161] For the wiring from the electrode terminal 9 of the semiconductor chip 3 to the lead wire 7 through the wire 10, ground wires are provided on both sides of the two signal wires of the RFVCO 44, thus providing electromagnetic shielding for the signal wires.

[0162] Therefore, the ground potent...

Embodiment 3

[0164] Figure 15 A schematic plan view showing a high-frequency power module of another embodiment (Embodiment 3) of the present invention when a part of the sealing body is removed.

[0165] Embodiment 3 relates to an example in which the RFVCO 44 is provided as an external mounting component so that the semiconductor chip 3 is not formed monolithically. In this dual-band communication method, various circuit components such as low-noise amplifier, mixer, VCO, synthesizer, IQ modulator / demodulator, frequency divider, DC-AC modulator, etc. are formed in a monolithic manner .

[0166] The two mixers in the receiving system are respectively controlled by a frequency divider, and the frequency divider is a frequency conversion circuit for converting a high-frequency signal output from the RFVCO 44 as an externally installed part into a low-frequency signal.

[0167] Therefore, in Example 3, as Figure 15As shown in , the RFVCO 44 is disposed outside the semiconductor device 1...

Embodiment 4

[0170] Figure 16 and Figure 17 A high-frequency power module related to another embodiment (embodiment 4) of the present invention, wherein Figure 16 shows a schematic plan view of the high-frequency power module when part of the sealing body is removed, Figure 17 A schematic cross-sectional view showing a high-frequency power module.

[0171] Embodiment 4 is characterized in that the tab 4 as a common ground terminal and the lead wire 7 taking the ground potential are electrically connected to each other using a wire 10b, and the lead wire 7 also serves as a ground external electrode terminal. In the semiconductor device 1 of Embodiment 4, since the back surface of the tab 4 is exposed from the back surface (mounting surface) of the sealing body 2, the tab 4 can be used as a ground external electrode terminal while being connected to the tab through the wire 10b. Lead 7 of 4 also serves as a grounded external electrode terminal.

[0172] Figure 18 It is a modificati...

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Abstract

This invention provides a high frequency power module which is incorporated into a mobile phone and which incorporates high frequency portion analogue signal processing ICs including low noise amplifiers which amplify an extremely weak signal therein. A semiconductor device includes a sealing body which is made of insulation resin, a plurality of leads which are provided inside and outside the sealing body, a tab which is provided inside the sealing body and has a semiconductor element fixing region and a wire connection region on a main surface thereof, a semiconductor element which is fixed to the semiconductor element fixing region and includes electrode terminals on an exposed main surface, conductive wires which connect electrode terminals of the semiconductor element and the leads, and conductive wires which connect electrode terminals of the semiconductor element and the wire connecting region of the tab. In such a semiconductor device, a circuit formed in the semiconductor element in a monolithic manner is comprised of a plurality of circuit parts and, in a specified circuit part (a low noise amplifier) which forms a portion of the circuit parts, all grounding electrode terminals out of electrode terminals of the semiconductor element are not connected to the tab through wires but are connected with the leads through wires.

Description

[0001] The application date is April 28, 2003, the application number is 200710127346.8 (the parent application is a patent application with national application number 03809636.6, and the international application number is PCT / JP03 / 05475), and the title is "Semiconductor Devices and Electronic Equipment" A divisional application of a patent application. technical field [0002] The present invention relates to semiconductor devices and electronic equipment, and can be effectively applied to, for example, high-frequency power modules (semiconductor devices), and simulations of high-frequency parts including low noise amplifiers (LNA: Low Noise Amplifier) ​​for amplifying extremely weak signals Signal processing IC technology for wireless communication equipment (electronic equipment). Background technique [0003] Mobile communication devices (mobile terminals) such as mobile phones are provided to handle a plurality of communication systems. That is, in a transmission / rec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/50H01L23/482H01L23/28H01L23/31H01L23/495
CPCH01L2924/01015H01L2924/01023H01L2924/01046H01L2224/4911H01L23/49503H01L2924/01082H01L2224/32245H01L2924/01002H01L24/32H01L2924/30105H01L2924/20752H01L23/50H01L2924/13091H01L2924/01019H01L2924/01029H01L2224/48091H01L2224/16245H01L2924/01087H01L2224/49171H01L2924/01013H01L2924/014H01L23/66H01L2924/30107H01L24/48H01L24/49H01L2924/01039H01L2224/92247H01L2224/45015H01L2224/484H01L24/45H01L2224/48599H01L2924/19043H01L2924/3011H01L2924/01079H01L2224/48247H01L2924/19107H01L2924/14H01L23/49548H01L2224/48011H01L2924/01033H01L2924/01005H01L2924/01006H01L23/3107H01L2924/01078H01L2924/01014H01L2224/48257H01L2224/45144H01L2224/73265H01L2924/3025H01L2924/1306H01L2924/351H01L2924/181H01L24/73H01L2224/05554H01L2224/49433H01L2924/00014H01L2924/20645H01L2924/00H01L2924/00012
Inventor 団野忠敏土屋勉
Owner RENESAS TECH CORP
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