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Method for producing full-solid electrochromic device

An electrochromic device and electrochromic technology, applied in the fields of instruments, optics, nonlinear optics, etc., can solve the problems such as hindering the large area of ​​electrochromic devices, industrialized production, complex manufacturing process and slow response speed. The effect of controllable microstructure, simple preparation process and fast response speed

Inactive Publication Date: 2009-08-19
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The traditional ion-conducting layer in ECD is generally a liquid electrolyte. This type of electrolyte has problems such as device packaging, freezing of the liquid, and accumulation of side reaction products. Therefore, solid materials with high ionic conduc

Method used

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  • Method for producing full-solid electrochromic device
  • Method for producing full-solid electrochromic device

Examples

Experimental program
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Effect test

Embodiment 1

[0012] A method for preparing an all-solid-state electrochromic device, comprising the following steps:

[0013] 1) With clean ITO glass as the substrate, pure metal tungsten (purity 99.99%) as the target, and argon and oxygen as the working gas, the electrochromic thin film layer is prepared by DC magnetron sputtering. The basic parameters are: The back vacuum is 6.6×10 - 3Pa, the flow ratio of argon and oxygen is 2.5:1, the working pressure is 3.0Pa, the voltage is 400V, the bias voltage is 80V, the substrate temperature is room temperature, and the sputtering time is 30min to prepare ITO glass / electrochromic film layer, the thickness of the electrochromic film is about 350nm;

[0014] 2) Mix 20.8g of nickel sulfate and 4.02g of potassium persulfate, add to 200ml of deionized water to prepare a solution, stir well at room temperature, put clean ITO glass into the solution, then pour 20ml of ammonia water, and stir vigorously for 15min , take out the ITO glass, rinse it sev...

Embodiment 2

[0019] A method for preparing an all-solid-state electrochromic device, comprising the following steps:

[0020] 1) With clean ITO glass as the substrate, pure metal tungsten (purity 99.99%) as the target, and argon and oxygen as the working gas, the electrochromic thin film layer is prepared by DC magnetron sputtering. The basic parameters are: The back vacuum is 6.6×10 -3 Pa, the flow ratio of argon and oxygen is 2.7:1, the working pressure is 3.3Pa, the voltage is 390V, the bias voltage is 100V, the substrate temperature is room temperature, and the sputtering time is 15min, the ITO glass / electrochromic film is prepared layer, the thickness of the electrochromic film is about 180nm;

[0021] 2) Mix 20.8g of nickel sulfate and 4.02g of potassium persulfate, add to 200ml of deionized water to prepare a solution, stir well at room temperature, put clean ITO glass into the solution, then pour 20ml of ammonia water, and stir vigorously for 10min , take out the ITO glass, rinse...

Embodiment 3

[0026] A method for preparing an all-solid-state electrochromic device, comprising the following steps:

[0027] 1) With clean ITO glass as the substrate, pure metal tungsten (purity 99.99%) as the target, and argon and oxygen as the working gas, the electrochromic thin film layer is prepared by DC magnetron sputtering. The basic parameters are: The back vacuum is 6.6×10 -3 Pa, the flow ratio of argon and oxygen is 2.7:1, the working pressure is 3.3Pa, the voltage is 390V, the bias voltage is 100V, the substrate temperature is room temperature, and the sputtering time is 12min, the ITO glass / electrochromic film is prepared layer, the thickness of the electrochromic film is about 150nm;

[0028] 2) Mix 20.8g nickel sulfate and 4.02g potassium persulfate, add to 200ml deionized water to prepare a solution, stir evenly at room temperature, put clean ITO glass into the solution, then pour 20ml ammonia water, stir vigorously for 8min, Take out the ITO glass, rinse it with deioniz...

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Abstract

The invention discloses a preparation method of an all-solid-state electrochromic device which comprises a first transparent conductive layer, an electrochromic thin film layer, an ionic conductive layer, an ion-storing thin film layer and a second transparent conductive layer in sequence. The preparation method comprises the following steps: tungsten is deposited on ITO glass by using direct current magnetron sputtering, thus obtaining an ITO glass/electrochromic thin film layer; the ion-storing thin film layer is deposited on the ITO glass by using electroless plating; and gel electrolyte precursors are injected between the two semi-finished devices, namely, the prepared ITO glass/electrochromic thin film layer and the prepared ITO glass/ion-storing thin film layer, thus obtaining the all-solid-state device after heat treatment. Compared with the electrochromic devices prepared by other single or composite methods, the prepared device has the advantages of wide adjusting range of visible light transmittance, fast responding speed and the like. Each layer of components and microscopic structure forming the device can be controlled, and the preparation technique is simple and easy for popularization.

Description

technical field [0001] The invention relates to a preparation method of an all-solid-state electrochromic device. Background technique [0002] Electrochromics (EC) refers to the phenomenon that the optical properties of materials undergo reversible changes under the action of an external electric field. Electrochromism only needs a voltage of about 2V to work, and the original coloring or fading state can be kept unchanged in the open circuit state, so the energy consumption is very little. Electrochromic devices (ECD) are expected to be used in building smart windows, automotive anti-glare rearview mirrors, passive and active photonic devices, display devices, variable transmittance glasses, automotive sunroofs, surface temperature control of spacecraft, And high-resolution medical imaging detectors, etc. The electrochromic device is composed of a transparent conductive layer, an electrochromic layer, an ion conductive layer, an ion storage layer and a transparent conduc...

Claims

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Application Information

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IPC IPC(8): G02F1/153C03C17/34C03C17/36
Inventor 涂江平张俊夏新辉王秀丽
Owner ZHEJIANG UNIV
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