Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resistance repair construction for current sensing component and manufacturing method thereof

A technology of current sensing, manufacturing method, applied in the direction of resistors, electrical components, non-adjustable metal resistors, etc.

Active Publication Date: 2011-11-02
JIANGMEN JUNEWAY ELECTRONIC TECH CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] 2. When covering the film, the solder resist ink will smudge to the electrode part, so that the first and second covering layers will cover the electrode surface [such as Figure 1D], it will also affect its resistance value
[0009]3. The first and second covering layers are formed by drying and hardening with an ultraviolet dryer or heating and drying. The first and second covering layers are partially trimmed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistance repair construction for current sensing component and manufacturing method thereof
  • Resistance repair construction for current sensing component and manufacturing method thereof
  • Resistance repair construction for current sensing component and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The features of the present invention can be clearly understood by referring to the drawings and the detailed description of the embodiments.

[0025] The resistance repairing structure of the current sensing component of the present invention and its manufacturing method, wherein, the current sensing component 2, such as figure 2 As shown, at least one resistance layer 22 is mainly provided on the surface of a substrate 21, and separate electrode layers 23 are provided on both ends of the surface of the substrate 21, and the resistance layer 22 is also provided with circuit patterns (not shown in the figure). ), the two electrode layers 23 are arranged on both sides of the resistance layer 22, and are electrically connected with the resistance layer 22 to establish a current path.

[0026] The key points of the present invention are: the resistance layer 22 is provided with a first protective layer 24, the surface of the resistance layer 22 and the first protection la...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a resistor correcting structure of a current sensing component. The surface of a resistor layer is provided with a first protecting layer first, and then the resistor value is corrected. The surfaces of the resistor layer and the first protecting layer are provided with cuts and a second protecting layer covers the surface of the first protecting layer so as to fully cover the cuts, thereby improving the phenomenon that when the prior thick film resistor is covered by the protecting layer after the resistor value is corrected through laser, the resistor value of the resistor body (a resistor layer and an electrode layer) can generate a larger error because a resistor body (the resistor layer and the electrode layer) is connected with the protecting layer extensively. The first protecting layer and the second protecting layer of the resistor correcting structure are made of optically active materials so as to further trim area ranges of the first protecting layer and the second protecting layer by an exposure and development mode without overlapping with the electrode layer, so that the resistor value of the current sensing component can be controlled accurately.

Description

technical field [0001] The present invention provides a resistance repairing structure of a current sensing component and a manufacturing method thereof, in particular to a resistance repairing structure of a current sensing component which can precisely control the resistance value of the current sensing component and is not prone to errors. Manufacturing method. Background technique [0002] The known thick film resistors include: a substrate, and the electrodes at both ends are reserved on it, the resistive material is combined on the substrate by printing to form a resistive layer, and combined with the electrodes at both ends, the laser beam The resistance layer is cut, the resistance value is corrected, and finally a protective film is covered to prevent the corrected resistance value from changing again due to the influence of external physical environment and other factors. [0003] Most of the substrates used in early thick film resistors were made of ceramic mate...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H05K3/10H01C7/00
Inventor 颜琼章
Owner JIANGMEN JUNEWAY ELECTRONIC TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com