Image sensor and fabricating method thereof

Abstract

An image sensor and fabricating method thereof may include a semiconductor substrate, a plurality of photodiodes formed on and / or over the semiconductor substrate, a first insulating layer formed on and / or over the semiconductor substrate including the plurality of photodiodes, at least one metal line formed on and / or over the first insulating layer, a second insulating layer having a plurality of wells formed on and / or over the plurality of photodiodes, a plurality of color filters formed by embedding color filter layers in a plurality of the wells, and a plurality of microlenses formed on and / or over the color filters.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2007-0123619 filed on November 30, 2007 under 35 USC § 119, the entire contents of which are hereby incorporated by reference. technical field [0002] The invention relates to a semiconductor device, in particular to a CMOS image sensor and a manufacturing method thereof. Background technique [0003] In general, an image sensor is a semiconductor device that converts an optical image into an electrical signal. Image sensors can be classified into CCD (Charge Coupled Device) and CMOS (Complementary Metal Oxide Semiconductor) devices. The image sensor includes a light receiving area having a photodiode to sense light, and a logic area that processes the sensed light into an electrical signal that can be converted into data. Many efforts have been made to increase photosensitivity. [0004] figure 1 is a cross-sectional view of the CMOS image sensor 1, showing a light receiving area including ph...

AI Technical Summary

Problems solved by technology

However, image sensor structures reach design limits when metal lines are required to have a thickness less than the required minimum thickness specified by other design methods

Therefore, a pixel pitch limitation arises and prevents further reductions in pixel size

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