Dynamic detection electrostatic protection circuit

A detection circuit and electrostatic protection technology, which is applied to emergency protection circuit devices, emergency protection circuit devices for limiting overcurrent/overvoltage, static electricity, etc., can solve problems affecting and affecting electrostatic discharge performance, etc.

Active Publication Date: 2009-05-27
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the gate capacitance of the introduced PMOS transistor and NMOS transistor will still affect the selection of the capacitance value in the dynamic d

Method used

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  • Dynamic detection electrostatic protection circuit
  • Dynamic detection electrostatic protection circuit
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Such as image 3 shown. The dynamic detection electrostatic protection circuit of the present invention, in figure 2 On the basis of the electrostatic protection circuit structure shown, the NMOS tube is removed; it includes a dynamic detection circuit, an intermediate isolation circuit, and an electrostatic discharge circuit. The influence of the parasitic gate capacitance on the selection of the capacitance value in the dynamic detection circuit during circuit design is further reduced, thereby improving the electrostatic discharge performance of the dynamic detection static discharge circuit structure. In addition to the function of isolating the dynamic detection circuit and the electrostatic discharge circuit, the intermediate isolation circuit also plays the role of voltage division and driving.

[0023] The dynamic detection circuit, the electrostatic discharge circuit and the intermediate isolation circuit are connected in parallel between the electrostatic t...

Embodiment 2

[0026] Such as Figure 4 As shown, the dynamic detection electrostatic protection circuit of the present invention, in figure 2 On the basis of the electrostatic protection circuit structure shown, the PMOS transistor is removed; it includes a dynamic detection circuit, an intermediate isolation circuit, and an electrostatic discharge circuit. The influence of the parasitic gate capacitance on the selection of the capacitance value in the dynamic detection circuit during circuit design is further reduced, thereby improving the electrostatic discharge performance of the dynamic detection static discharge circuit structure. In addition to the function of isolating the dynamic detection circuit and the electrostatic discharge circuit, the intermediate isolation circuit also plays the role of voltage division and driving.

[0027] The dynamic detection circuit, the electrostatic discharge circuit and the intermediate isolation circuit are connected in parallel between the electr...

Embodiment 3

[0030] Such as Figure 5 Shown, it and embodiment one (referring to image 3 ) is that the resistance of the intermediate isolation circuit and the dynamic detection circuit is a polysilicon resistance Rpoly or the n-well resistance Rnw, and the capacitance of the dynamic detection circuit is a polysilicon-insulator-polysilicon (pip: poly-isolation-poly) capacitance.

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PUM

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Abstract

The invention discloses a dynamic sensing electrostatic protection circuit comprising a dynamic sensing circuit connected between the static end and the earth terminal in parallel, a middle buffer circuit and a static leaking circuit; the middle buffer circuit is used for buffering the dynamic sensing circuit and the static leaking circuit, and performances voltage division and driving; the input end of the middle buffer circuit is connected with the dynamic sensing circuit electrically, the output end is connected with the input end of the static leaking circuit; the middle buffer circuit consists of a PMOS tube and a resistor connected in series, or consists of a NMOS tube and a resistor connected in series. The invention can further reduce the influence of the parasitic grid capacitance to the capacitance selection in the dynamic sensing circuit, and improve the static leaking performance of the dynamic sensing static leaking circuit structure.

Description

technical field [0001] The invention relates to a static electricity protection circuit structure, in particular to a dynamic detection static electricity protection circuit. Background technique [0002] In the electrostatic discharge circuit, an appropriate bias voltage is coupled to the gate of the electrostatic discharge metal-oxide-semiconductor field effect transistor (MOSFET), which is conducive to reducing the electrostatic discharge turn-on voltage of the MOSFET tube; and in the multi-finger type In the MOSFET structure, the gate bias voltage is also conducive to the uniformity of conduction of each fork, thereby improving its electrostatic protection performance. figure 1 , 2 The circuit shown is a dynamic detection electrostatic discharge circuit composed of resistors and capacitors, which is widely used at present. [0003] exist figure 1 In the circuit shown, when the static electricity is discharged, the static electricity can couple a certain bias voltage t...

Claims

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Application Information

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IPC IPC(8): H05F3/04H01L23/60H02H9/00
CPCH01L2924/0002
Inventor 田光春
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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