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Iodate-containing chemical-mechanical polishing compositions and methods

A polishing composition and chemical mechanical technology, applied in the direction of polishing composition containing abrasives, chemical instruments and methods, and other chemical processes, can solve problems affecting the performance of integrated circuit layers, unfavorable, expensive production of polishing compositions, etc.

Inactive Publication Date: 2009-03-18
CMC MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, high solids content can create defects on the surface of the substrate, which can adversely affect the performance of any integrated circuit layers fabricated from the substrate and can reduce the selectivity of tantalum to silicon dioxide
In addition, polishing compositions containing high solids content are more expensive to produce

Method used

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  • Iodate-containing chemical-mechanical polishing compositions and methods
  • Iodate-containing chemical-mechanical polishing compositions and methods
  • Iodate-containing chemical-mechanical polishing compositions and methods

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] This example evaluates the effect of iodate concentration on the removal rates of tantalum, copper, and dielectric oxides using the polishing compositions of the present invention.

[0040] Similar substrates containing unpatterned tantalum, copper, and TEOS layers were polished with six different polishing compositions (Polishing Compositions 1A, 1B, 1C, 1D, 1E, and 1F). Each polishing composition contained 0.5% by weight polycondensed silica (80 nm diameter) and 0.1% by weight benzotriazole, and had a pH of 2.4 in water. Polishing Compositions 1A-1F further contained 0.01 wt%, 0.025 wt%, 0.05 wt%, 0.1 wt%, 0.2 wt%, and 0.25 wt% KIO 3 . Tantalum, copper and TEOS removal rate results are shown in Table 1.

[0041] Table 1: Material removal rate as a function of iodate concentration

[0042]

[0043] These results illustrate that the dielectric oxide (TEOS) removal rate is largely independent of iodate concentration. In contrast, tantalum and copper removal rates ...

Embodiment 2

[0045] This example evaluates the effect of abrasive concentration on the removal rates of tantalum, copper, and dielectric oxides using the polishing compositions of the present invention.

[0046] Similar substrates containing unpatterned tantalum, copper, and TEOS layers were polished with five different polishing compositions (polishing compositions 2A, 2B, 2C, 2D, and 2E). Each polishing composition contains 0.05% by weight of KIO 3 And 0.1% by weight of benzotriazole (BTA), the pH value in water is 2.4. Polishing Compositions 2A-2E further contained 0.25%, 0.5%, 1%, 1.5%, and 2% by weight of polycondensed silica (80 nm diameter), respectively. Tantalum, copper and TEOS removal rates are shown in Table 2.

[0047] Table 2: Material removal rate as a function of abrasive concentration

[0048]

[0049] These results illustrate that the dielectric oxide (TEOS) removal rate is strongly dependent on the abrasive concentration. In contrast, tantalum and copper removal r...

Embodiment 3

[0051] This example evaluates the dependence of material removal rate on pH.

[0052] Similar substrates containing unpatterned tantalum, copper, and TEOS layers were polished with six different polishing compositions (Polishing Compositions 3A, 3B, 3C, 3D, 3E, and 3F). Each polishing composition contained 0.1 wt% KIO 3 , 0.1 wt % BTA and 0.5 wt % polycondensed silica (80 nm diameter). Polishing Composition 3A has a pH of 2.19, Polishing Composition 3B has a pH of 2.45, Polishing Composition 3C has a pH of 2.6, Polishing Composition 3D has a pH of 2.8, and Polishing Composition 3E has a pH of 3.12, And polishing composition 3F had a pH of 3.67. The tantalum, copper and TEOS removal rate results are shown in Table 3.

[0053] Table 3: Material removal rate as a function of pH

[0054]

[0055] These results indicate that the removal rates of tantalum, copper, and TEOS include KIO 3 Strong dependence of the pH of the polishing composition.

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Abstract

The invention provides compositions and methods for planarizing or polishing a substrate. The composition comprises an abrasive, iodate ion, a nitrogen-containing compound selected from the group consisting of a nitrogen-containing C4-20 heterocycle and a C1-20 alkylamine, and a liquid carrier comprising water.

Description

technical field [0001] The invention relates to a chemical mechanical polishing composition and a method for polishing a substrate using the composition. Background technique [0002] The development of next-generation semiconductor devices has emphasized the use of metals, such as copper, that have lower resistivity values ​​than previous generation metals, in order to reduce the capacitance between conductive layers on the device and increase the frequency at which circuits can operate. One way to fabricate planar copper circuit traces on a silicon dioxide substrate is known as the damascene process. According to this process, a silicon dioxide dielectric surface is patterned by a conventional dry etch process to form holes and trenches for vertical and horizontal interconnects. The patterned surface is coated with an adhesion promoting layer such as tantalum or titanium, and / or a diffusion barrier layer such as tantalum nitride or titanium nitride. A copper layer is the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02H01L21/3212C09K3/14
Inventor 李守田菲利普·卡特张剑
Owner CMC MATERIALS INC
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