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Grinding medium for chemico-mechanical polishing and preparation thereof

A chemical mechanical and chemical polishing technology, applied in chemical instruments and methods, inorganic pigment treatment, polishing compositions containing abrasives, etc., can solve problems such as only attracting water

Active Publication Date: 2009-02-25
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the surface of the sol, according to Bergna's research results, the combination of Si, hydroxyl and water forms hydroxyl groups on the silicon surface, and the hydroxyl groups are also factors that stabilize the silica sol, but this can only be done under alkaline conditions, and aluminum does not combine with hydroxyl groups. , can only attract oxygen atoms in water

Method used

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  • Grinding medium for chemico-mechanical polishing and preparation thereof

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preparation example Construction

[0025] The invention is an aluminum-silicon composite coated SiO 2 Abrasive and preparation method, it comprises the following steps:

[0026] (1) Preparation of parent SiO 2 . Choose commercial SiO 2 , and its particle size can be between 5-200 nanometers, or between 20-100 nanometers, preferably 50-100 nanometers. Or 5-50 nanometers, or 100-200 nanometers. The pH value can be between 9-11. Dilute it into a 1%-5% colloidal solution, and adjust the pH value to about 10 with KOH or HCl.

[0027] (2) Hydrolysis generates AlOOH solution. For aluminum salt hydrolysis, it is best to use volatile organic aluminum salts, such as aluminum isopropoxide. Secondly, inorganic aluminum salts can be used. Grind thoroughly with a mortar, then add it into water according to the molar ratio of water and aluminum salt 200:1, and disperse by ultrasonic. Then put it in a four-necked flask and hydrolyze it for 1.5-2 hours at 81-89 degrees, raise the temperature to 90-95 degrees, and add a...

Embodiment 1

[0033] (1) Take 10ml of 30% 60nm silica sol, its pH value is 10.3. Dilute it 20 times. The pH was adjusted to 10 with KOH.

[0034] (2) Weigh 14g of aluminum isopropoxide, put it in a grinder and grind it thoroughly, add 400ml of water, heat and hydrolyze it in a four-necked flask for 1.5h at a temperature of 85 degrees, and circulate water. Heat up to 93 degrees, add HNO 3 Make the pH value and then heat at a constant temperature in the open for 24 hours to obtain 200 ml of a transparent aluminum sol with a pH value of 3.7.

[0035] (3) Measure 50ml of 40% water glass, dilute to 5%, add cation exchange column to obtain 408ml active silicic acid

[0036] (4) Put 200ml of the matrix abrasive obtained in (1) into a four-necked flask, heat to 85 degrees, and use a peristaltic pump to squeeze the aluminum sol obtained in (2) into a multi-necked flask at a rate of 2ml / sec. 200ml of active silicic acid obtained in (3) was added into (1) at 2ml / sec, and at the same time, the heat...

Embodiment 2

[0039](1) Take 10ml of 30% 100nm silica sol, its pH value is 10.2. Dilute it 20 times and adjust the pH to 10 with KOH.

[0040] (2) Weigh AlCl 3 9g, put it in a grinder and grind it thoroughly, add 400ml of water, put it in a four-necked flask and heat it for hydrolysis for 1.5h, the temperature is 85 degrees, and the water circulates. Heat up to 93 degrees, add HNO 3 Make the pH value and then heat at a constant temperature in the open for 24 hours to obtain 200 ml of a transparent aluminum sol with a pH value of 3.2.

[0041] (3) Measure 50ml of 40% water glass, dilute to 5%, add cation exchange column to obtain 408ml active silicic acid

[0042] (4) 200ml of matrix abrasive obtained in (1) is put into a multi-necked flask, heated to 85 degrees, and the aluminum sol obtained in (2) is squeezed into a multi-necked flask with a rate of 2ml / sec with a peristaltic pump, and the same The obtained 200ml active silicic acid was added into (1) at 2ml / sec, and at the same time, ...

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Abstract

The invention provides an abrasive for chemical-mechanical polishing and a preparation method thereof. The abrasive is used in the field of chemical-mechanical polishing. The nano-SiO2 abrasive is diluted to the concentration lower than 10% (mass fraction) and taken as a growth matrix, the growth matrix is hydrolyzed by aluminum salt at the temperature of 80-90 DEG C, and then added with acid and aged at the temperature of 90-100 DEG C to prepare an acidic AlOOH solution. Water glass is diluted to lower than 10% to prepare active silicic acid by strong cation exchange resin. Finally, the AlOOH solution and the active silicic acid obtained are dropped into silica sol according to a particle growth method, added with a certain quantity of alkali to control the pH value ranging from 8 to 11, heated at a constant temperature and vigorously stirred, and aged for 2 hours. In the aluminum-silicon compound growing on the silicon base, the atomic ratio of aluminum and silicon can be controlled according to the ratio of the AlOOH to the active silicic acid. The abrasive obtained can expand the existing pH value range thereof, widen the application scope of the chemical-mechanical polishing, and improve the surface chemical properties.

Description

technical field [0001] The invention relates to the field of preparation technology of precision polishing abrasives, in particular to a SiO 2 Abrasives for chemical-mechanical polishing of base-coated silicon-aluminum composites and a preparation method thereof. Background technique [0002] Chemical mechanical polishing is a process method widely used in the field of microelectronics. It is a very necessary process both in the polishing of substrates and in the preparation of integrated circuits. Its commonly used abrasives include cerium oxide, aluminum oxide, and silicon oxide. The Mohs hardness of alumina is 9.0, which has the advantage of fast polishing speed, but it is difficult to disperse into uniform spheres, which is easy to cause scratches, which is a defect in the field of microelectronics with strict requirements; the Mohs hardness of silicon oxide is the same as that of silicon, and it is difficult to Increased polishing rate, but good dispersion and stabili...

Claims

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Application Information

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IPC IPC(8): C09C1/68C09C3/06C09G1/02
Inventor 汪海波刘卫丽宋志棠封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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