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Visible light InGaN based photoelectrochemical cell and preparation

A photoelectrochemical cell and visible light technology, applied in the field of visible light responsive photoelectrochemical cells and preparation, can solve problems such as difficulty in the preparation of group III nitride photoelectrodes, and achieve the effects of good stability and high conversion efficiency

Inactive Publication Date: 2009-02-11
NANJING UNIV
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Problems solved by technology

However, due to the difficulty in the preparation of III-nitride photoelectrodes, there are few international reports on their photoelectric conversion properties.

Method used

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  • Visible light InGaN based photoelectrochemical cell and preparation
  • Visible light InGaN based photoelectrochemical cell and preparation
  • Visible light InGaN based photoelectrochemical cell and preparation

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Embodiment Construction

[0017] InGaN alloy growth structure and photoelectrode structure such as figure 1 shown. The substrate is made of 2 inch α-Al 2 o 3 (0001), the GaN support layer was grown by a two-step method with a thickness of 1 to 2 μm. After the GaN growth is completed, the temperature of the reaction chamber is lowered to the InGaN growth temperature, and TMIn and TMGa are introduced as Group III reaction sources, N 2 As carrier gas, NH 3 As the reaction source of group V, the growth of InGaN alloy starts, In x Ga 1-x The growth temperature range of the N alloy layer is from 600 to 850°C, which determines the composition of In in the InGaN alloy, and the thickness is from 50nm to 500nm. All samples are undoped.

[0018] The photoelectrode structure of the photoelectrochemical cell is as figure 1As shown, the In composition x of InGaN alloy is respectively 0, 0.06, 0.12, and 0.2 to prepare photoelectrodes. By means of sputtering, metal In is deposited on the surface of the InGaN f...

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Abstract

A production method of visible light InGaN-based photoelectrochemical cells comprises the steps of performing epitaxial growth of a GaN support layer and an InxGa1-xN alloy layer with single-crystal orientation on an alpha-Al2O3 substrate by using metal organic chemical vapor deposition (MOCVD), and alleviating macro-lattice mismatch between the InGaN layer and the substrate by using the GaN layer; wherein the growth of the GaN layer adopts a two-step method which comprises the following two steps: setting a low temperature buffer layer with thickness of 50-100 nm and growth temperature of 500-550 DEG C, and increasing the growth temperature to 1100 DEG C to allow the GaN layer to grow to obtain the GaN layer with thickens of 1-2 mum; the growth temperature range of the InxGa1-xN alloy layer is 600-850 DEG C, the composition x of indium (In) in the InxGa1-xN alloy layer is higher than or equal to 0 and lower than or equal to 1, the thickness of the InxGa1-xN alloy layer is 50-500 nm, and an ohmic contact electrode is formed on the surface of the InxGa1-xN alloy film when 1-10 mum indium (In) is deposited.

Description

technical field [0001] The invention relates to a semiconductor photoelectrochemical cell, in particular to an efficient and stable visible light responsive photoelectrochemical cell and a preparation method. Background technique [0002] The energy problem is one of the major problems faced by human beings, and how to solve this problem poses a huge challenge to human beings. This problem is particularly prominent in China, where the country has also formulated relevant policies and regulations to vigorously develop renewable energy, especially the utilization of solar energy. Traditional p-n junction photovoltaic cells have played an increasingly important role in solar energy utilization, but their high manufacturing cost has become a major obstacle to their large-scale application. Photoelectrochemical battery is a new type of battery developed in the 1970s. It can directly use sunlight to decompose water to produce hydrogen, which can be used to replace the increasing...

Claims

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Application Information

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IPC IPC(8): H01G9/20H01G9/042H01G9/022H01M14/00H01L31/18H01L31/04
CPCY02E10/50Y02P70/50
Inventor 刘斌罗文俊谢自力李朝升陈敦军邹志刚张荣
Owner NANJING UNIV
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