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Novolac resin, preparation method and photoresist composition containing the resin

A technology of novolak resin and photoresist, which is used in the removal of conductive materials by chemical/electrolytic methods, optics, opto-mechanical equipment, etc. Satisfaction and other problems, to achieve the effect of improved circuit line width uniformity and high heat resistance

Active Publication Date: 2009-01-14
深圳市容大感光科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the novolak resins thus obtained can be used to prepare photoresist compositions, the resulting compositions are not satisfactory in terms of photosensitivity, film retention, heat resistance, adhesiveness, etc.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0029] Preparation of Novolak Resin

[0030] Synthesis Example 1

[0031] Add 45g of m-cresol, 55g of p-cresol, 56g of formaldehyde, 9g of glyoxal and 0.5g of oxalic acid into a three-necked flask, then stir to obtain a homogeneous mixture, which is heated at 95°C for 4 hours. The mixture was cooled to room temperature to obtain a novolac resin (A).

[0032] Synthesis Example 2

[0033] A phenolic compound mixture consisting of 46 g of o-cresol, 40 g of p-cresol, 8 g of 2,4-xylenol and 6 g of 2,5-xylenol was charged into a four-necked flask equipped with a condenser, a thermometer and a dropping funnel. Add 1.0 g of oxalic acid (1% of phenol weight), then heat the flask to 95° C., add dropwise a mixture of 50 g of formaldehyde and 15 g of glyoxal within 1 hour, and react at 95° C. for 7 hours. A distiller was then used instead of the circulating condenser, and the reaction was evaporated at 110°C for 2 hours. The monomer residue was removed by vacuum evaporation at 180° C...

Embodiment 1

[0042] The following components were uniformly mixed at room temperature to prepare photoresist composition 1.

[0043] 2,3,4,4'-tetrahydroxybenzophenone-1,2-diazonaphthoquinone-4-sulfonate 2.0g

[0044] 2,3,4,4′-Tetrahydroxybenzophenone-1,2-diazonaphthoquinone-5-sulfonate 2.5g

[0045] Novolac resin (A) 15.0g

[0046] Propylene glycol monomethyl ether 70.0g

Embodiment 2

[0048] The following components were uniformly mixed at room temperature to prepare photoresist composition 2.

[0049] 2,3,4-Trihydroxybenzophenone-1,2-diazonaphthoquinone-5-sulfonate 1.5g

[0050] 2,3,4,4'-tetrahydroxybenzophenone-1,2-diazonaphthoquinone-4-sulfonate 2.5g

[0051] Novolak resin (B) 15.0g

[0052] Propylene glycol methyl ether acetate 70.0g

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Abstract

The invention provides phenolic varnish resin and the preparation method as well as a photoresist composition containing the phenolic varnish resin. The phenolic varnish resin is characterized in that the phenolic varnish resin is made through condensation reaction of the mixture of formaldehyde and the compound containing two aldehyde groups and one or more hydroxybenzene compounds. In the photoresist composition prepared through the phenolic varnish resin, heat resistance of the photoresist glue film is improved, and simultaneously, performances of photosensitivity, film remaining ratio and circuit wire width uniformity of the photoresist, and the like, are ameliorated, thus the photoresist composition of the invention is suitable for the LCD production.

Description

technical field [0001] The invention relates to a novolac resin and a preparation method thereof, and a photoresist composition containing the resin, which can be used to manufacture fine circuit patterns such as liquid crystal display element circuits and semiconductor integrated circuits. It also relates to methods of fabricating circuits using such photoresist compositions. Background technique [0002] In order to manufacture fine circuit patterns in liquid crystal display circuits or semiconductor integrated circuits, it is necessary to uniformly coat or apply circuit photoresist compositions on insulating layer or conductive metal layer substrates. Then, the coated circuit photoresist composition is exposed through a mask of a predetermined shape, and then developed to form a pattern of a predetermined shape. The insulating layer or the conductive metal layer substrate is etched using the patterned photoresist coating as a mask, and then the remaining photoresist film...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G8/04G03F7/021G03F7/00H05K3/06
Inventor 刘启升杨遇春牛辉楠吴君丽
Owner 深圳市容大感光科技股份有限公司
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