Integrated circuit internal inductance and method of manufacture

Abstract

The invention discloses an integrated circuit built-in inductance and a method of production thereof. The inductance comprises a substrate, an isolating layer, a lower metal layer, an interlaminar medium layer and a spiral upper metal layer, wherein the lower metal layer and the interlaminar medium layer are located on the surface of the isolating layer, the spiral upper metal layer is located on the surface of the interlaminar medium layer, and the interlaminar medium layer is internally equipped with a through hole for connecting the lower metal layer and the upper metal layer. In addition, the inductance further comprises a well layer which is located in the substrate and has the doping type opposite to that of the substrate, and the well layer enables a PN junction to be longitudinally formed in the substrate of the integrated circuit built-in inductance, thereby effectively increasing the Q value of the inductance. The invention further provides a method of production corresponding to the integrated circuit built-in inductance, which can be combined with the process of integrated circuits without additional processes, thereby the method is simple and convenient to realize.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an inductance in an integrated circuit and a manufacturing method thereof. Background technique [0002] Inductors are a key component in radio frequency communications and are widely used in circuits such as amplifiers, mixers, oscillators, and power amplifiers. With the rapid development of semiconductor technology, the inductance element usually produced outside the integrated circuit chip can also be realized on the chip. At present, how to manufacture high-quality inductors in integrated circuits has become one of the hot research topics in integrated circuit manufacturing. [0003] figure 1 For the top view of the inductor in the existing integrated circuit, such as figure 1 As shown, the upper metal layer 101 of the inductor in the integrated circuit is in a spiral shape, and is connected to the lower metal layer through a through hole 103, figure 1...

AI Technical Summary

Problems solved by technology

However, the structure in this patent cannot block the vertical parasitic loss current on the one hand, and on the other hand, it needs to increase the process steps when it is realized, which leads to the prolongation of the production cycle

In addition, due to the need for small-scale, deep-layer doping in this structure, higher requirements are placed on the process, which increases the complexity of the process.

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