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Self Raman multiple frequency complete-solid yellow light laser

An all-solid-state laser technology, applied in lasers, laser components, phonon exciters, etc., can solve the problems of low peak power of fundamental frequency light, unstable structure, low power of yellow light, etc., and achieve high output power and conversion Efficiency, stable performance, and good stability

Inactive Publication Date: 2008-11-05
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The sum-frequency method has the disadvantages of large volume, low power, poor conversion efficiency, unstable structure, and difficulty in realization; the method of frequency-doubling Raman light is simpler than the method of sum-frequency, but most of the world uses extracavity frequency-doubling Raman light at present. Mann's method (Low threshold, diode end-pumped Nd 3+ :GdVO 4 self-Ramanlaser, "Optical Materials", Vol.29, 2007, 1817-1820) and intracavity frequency-doubling continuous Raman light method (Efficient all-solid-state yellow laser source producing 1.2-W average power, "Optics Letters ", Vol.24, 1999, 1490-1492; All-solid-state 704mW continuous-waveyellow source based on an intracavity, frequency-doubled crystalline Raman laser, "Optics Letters", Vol.32, 2007, 1114-1116)
The method of frequency doubling Raman light outside the cavity is poor in frequency doubling efficiency due to the low power of Raman light outside the cavity, and the output yellow light power is low; while the method of frequency doubling continuous Raman light in the cavity is due to the peak power of the fundamental frequency light Low, the conversion efficiency into Raman light is poor, and high-power yellow light output cannot be obtained

Method used

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Experimental program
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Effect test

Embodiment 1

[0025] Embodiment 1 of the present invention such as figure 1 As shown, it includes a laser diode LD end pump source and a resonant cavity; the resonant cavity is composed of a rear cavity mirror 4 and an output mirror 8, and the Raman crystal 5 is selected from the Raman crystal 5 doped with neodymium gadolinium vanadate Nd:GdVO 4 The crystal, the Q-switching device 6 is an acousto-optic Q-switching device, and the frequency doubling crystal 7 is potassium titanyl phosphate KTP crystal. The self-Raman crystal 5, the acousto-optic Q-switching device 6 and the frequency doubling crystal 7 are placed in sequence in the resonant cavity; the sides of the self-Raman crystal 5, the acousto-optic Q-switching device 6 and the frequency doubling crystal 7 are all surrounded by metal blocks with pipes Stay, the pipes inside the metal block are continuously circulated with cooling water to lower the temperature of the crystal.

[0026]The laser diode LD pump source includes a laser diod...

Embodiment 2

[0035] Embodiment 2 of the present invention such as figure 2 As shown, it includes a laser diode LD side pumping module 9 and a resonant cavity; the resonant cavity is composed of a rear cavity mirror 4 and an output mirror 8, and the self-Raman crystal 5 is neodymium-doped barium tungstate Nd:BaWO 4 The crystal, the Q-switching device 6 is an acousto-optic Q-switching device, and the frequency doubling crystal 7 is potassium titanyl phosphate KTP crystal. The LD side pump module 9 and the self-Raman crystal 5 are sequentially placed in the resonant cavity Nd:BaWO 4 Crystal, acousto-optic Q-switching device 6 and frequency doubling crystal 7 potassium titanyl phosphate KTP crystal; the sides of the above-mentioned crystals are surrounded by metal blocks with pipes, and the pipes in the metal blocks are continuously connected with circulating cooling water for cooling the crystals. Reduce the temperature.

[0036] The laser diode LD side pumping module 9 is composed of an L...

Embodiment 3

[0045] Same as embodiment 1, only described self-Raman crystal 5 is doped neodymium yttrium vanadate Nd:YVO 4 Crystal, size 3×3×15mm 3 , cut along the c-axis direction defined by physics, both ends of the self-Raman crystal 5 are coated with anti-reflection coatings in the 1000nm-1200nm band (the transmittance is greater than 99.8%), and the doping concentration of the self-Raman crystal 5 is 2- at.%. The exciter Raman crystal 5 is placed sequentially in the resonant cavity, which is neodymium-doped yttrium vanadate Nd:YVO 4 The crystal, the acousto-optic Q-switching device 6 and the frequency doubling crystal 7 are potassium titanyl phosphate KTP crystals, and the cavity length of the resonant cavity is 13 cm.

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Abstract

A self-raman double frequency total solid yellow light laser, includes a laser diode LD pumping source, a resonant cavity consisting of a back cavity mirror and an output mirror, characterized in that, a self-raman crystal, a Q-adjusting device and a double frequency crystal are arranged in the resonant cavity, which are processed with the temperature control by a cooling device. The laser of the invention has smaller volume, higher output power and conversion efficiency than that in the background technology, which can be widely used in the laser medical treatment field with small volume, stable performance and low cost.

Description

(1) Technical field [0001] The invention relates to a solid-state laser, in particular to a self-Raman frequency-multiplied all-solid-state yellow laser. (2) Background technology [0002] Laser technology is one of the major inventions of the 20th century, and it has been widely used in various fields such as industrial production, communication, information processing, medical and health, military affairs, cultural education, and scientific research. With the major breakthroughs in semiconductor laser diode technology, solid-state lasers have been strongly developed, and their application fields have been continuously expanded. The all-solid-state laser pumped by LD is a second-generation new solid-state laser with high efficiency, stability, good beam quality, long life and compact structure. It has become one of the key development directions of laser science. It is used in space communication, optical fiber communication , Atmospheric research, environmental science, m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/108H01S3/109H01S3/11H01S3/0941H01S3/042H01S3/08H01S3/00
Inventor 陈晓寒张行愚王青圃李述涛丛振华刘兆军范书振张琛
Owner SHANDONG UNIV
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