Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photoelectric conversion element

A technology for photoelectric conversion elements and photoelectric conversion layers, which can be used in electrical components, photovoltaic power generation, and electric solid-state devices, etc., and can solve problems such as difficulty in obtaining semiconductor layers.

Inactive Publication Date: 2008-08-20
ADEKA CORP +1
View PDF1 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a method of selecting the crystal shape in the film formation process by the vapor deposition method, an improvement method using substrate temperature control was tested (see Non-Patent Document 8), but it is also difficult to obtain a structure with a desired crystal shape having high photoelectric characteristics. The problem of the semiconductor layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoelectric conversion element
  • Photoelectric conversion element
  • Photoelectric conversion element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0166] Hereinafter, the present invention will be described in more detail through examples, but of course the present invention is not limited to these examples. In addition, each compound obtained by the synthesis example was purified by the sublimation purification method and used in the examples.

Synthetic example 1

[0167] [Synthesis Example 1] Compound 1

[0168] As Compound 1, a commercially available compound (manufactured by Aldrich) having a structure represented by the following [Chemical Formula 7] was used.

[0169] [chemical formula 7]

[0170] (compound 1)

Synthetic example 2

[0171] [Synthesis Example 2] Synthesis of Compound 2

[0172] Compound 2 represented by the following [Chemical Formula 8] was synthesized in the following order.

[0173] [chemical formula 8]

[0174] (compound 2)

[0175] Dissolve zirconocene dichloride in THF, add 2 equivalents of n-butyllithium at -78°C and stir for 1 hour. To this solution, 1 equivalent of the following compound diyne 1 was added and stirred at room temperature to produce the following compound zirconopentadiene 1. Add 2 equivalents of CuCl to it, and add 3 equivalents of N,N-dimethylpropylene urea (DMPU), and 1 equivalent of dimethyl acetylene dicarboxylate (DMAD), and stir at 50°C for 3 hours , the dihydride of compound 2 is generated, and the dihydride is reacted with 1 equivalent of 2,3-dichloro-5,6-dicyanobenzoquinone (DDQ) to obtain compound 2.

[0176] [chemical formula 9]

[0177] (diyne 1)

[0178] (Zirconopentadiene 1)

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A photoelectric device including a positive electrode and a negative electrode facing each other and a photoelectric layer between the electrodes, the photoelectric layer having a stack of (1) a p type semiconductor layer and (2) a p type / n type mixed semiconductor layer and optionally (3) an n type semiconductor layer or a metal oxide layer. The photoelectric device has at least one photoelectric efficiency-improving means selected from (a) using an organic semiconductor thin film having a charge mobility of 0.005 cm 2 / V·sec or more as at least one of the semiconductor layers, (b) controlling the energy gap between the positive electrode work function and the HOMO of the p type layer (1) and / or the energy gap between the negative electrode work function and the LUMO of the n type layer (3) to 0.5 eV or less, and (c) providing an organic compound buffer layer between the positive electrode and / or the negative electrode and the photoelectric layer, the buffer layer and the positive electrode and / or the negative electrode being chemically bonded to each other.

Description

technical field [0001] The present invention relates to a photoelectric conversion element that generates electromotive force by light irradiation. Background technique [0002] In recent years, the increase in demand for energy due to global warming and population increase due to fossil fuels has become a major issue concerning the survival of human beings. On the other hand, sunlight, needless to say, has cultivated the earth's environment since ancient times and is an energy source for all living things including human beings. Therefore, the use of sunlight as a clean energy source that is unlimited and does not generate harmful substances has recently been studied. Among them, a photoelectric conversion element that converts light energy into electrical energy, that is, a so-called "solar cell", is attracting attention as a powerful technical means. [0003] As an electromotive force material of a solar cell, an inorganic semiconductor formed of single crystal, polycry...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42
CPCH01L51/0037H01L51/4253B82Y10/00H01L51/4226H01L51/0094H01L51/0047H01L51/0078H01L51/0044Y02E10/549H01L51/0053H01L51/441H01L51/424H10K85/1135H10K85/154H10K85/215H10K85/621H10K85/311H10K85/40H10K30/151H10K30/30H10K30/20H10K30/81H10K30/50
Inventor 武舍清高桥保
Owner ADEKA CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products