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Method for preparing scanning electron microscope sample by ion beam bombing

An electron microscope and ion beam technology, applied in the preparation of test samples, measuring devices, instruments, etc., can solve the problems of loss of misleading and easy migration of information, and achieve the effect of no damage to the crystal structure

Inactive Publication Date: 2008-08-06
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the electrolytic corrosion process, some elements in the sample are active and easy to migrate, which will cause the loss of information and mislead the subsequent experimental plan

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] Sample requirements: the surface is clean, smooth and free of oil stains.

[0013] Operation method: first place the sample on the sample stage, and the vacuum degree of the bombardment chamber reaches 2×10 -3 Pa meets the working conditions of ion bombardment. The sample is continuously filled with argon during the bombardment process, and the sample stage itself rotates 360 degrees.

[0014] Determine the angle (inclination) between the sample and the ion beam, select the ion gun bombardment voltage (Kv) and ion beam current (mA), and determine the bombardment time according to the purpose of the experiment. Experience has proved that the bombardment time for hard materials is longer, and for soft materials The bombardment time is shorter.

[0015] material name

[0016] glass fiber

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PUM

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Abstract

A preparing method of a scanning electron microscope sample bombarded by ion beams relates to the preparing of the scanning electron microscope sample. The method is as follows: argon gas is continuously charged in under the condition of microvac 2x10<-3>Pa, the argon gas is ionized through an ion gun under the action of a high voltage field to obtain ion beams bombarding the surface of the sample, and the sample simultaneously rotates in 360 DEG to ensure an even bombarding on the surface of the sample. The included angle between the surface of the sample and the ion beams is generally a range from 7 DEG to 12 DEG, the bombarding voltage of the ion gun is a range from 4 kilovolt to 7 kilovolt, and the ion beams fall into a range from 0.4 milliampere to 0.5 milliampere. The method which is free of the impact of the sample material electrical property and does not bring about stress and strain to the sample during the bombarding process of the ion beams and also has no damage on the self crystal structure of the material is suitable for microscopic shape and appearance analysis of metals and nonmetal materials.

Description

technical field [0001] The invention relates to the preparation of scanning electron microscope samples, in particular to the preparation of scanning electron microscope samples by ion beam bombardment. Background technique [0002] Scanning electron microscopy is an indispensable means for microscopic morphology analysis in material science research. However, the preparation of the sample is particularly important, and the preparation method and process of the sample are an important way to ensure complete and true information. [0003] Generally, metallographic methods and electrolytic corrosion methods are commonly used. Metallographic method is easy to artificially create defects on soft materials and pure metal materials, which can cause dust particles in the air to be embedded in the sample and create false impressions on the experimental results. Metallographic method is powerless to the preparation of electronic information material "integrated chip" micron circuit...

Claims

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Application Information

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IPC IPC(8): G01N1/28G01N13/10
Inventor 翟少岩孟利庞景芹冯惠平
Owner UNIV OF SCI & TECH BEIJING
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