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Pyroelectric material of in situ nanometer composite Mg-Si-Sn basis and preparation method thereof

A mg-si-sn, thermoelectric material technology, applied in the direction of thermoelectric device junction lead-out material, thermoelectric device manufacturing/processing, etc. , to achieve the effect of improving thermoelectric performance, reducing interface pollution and reducing thermal conductivity

Inactive Publication Date: 2010-06-02
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the two phases are generally synthesized first, and then the two phases are artificially mixed, which makes it difficult to control the distribution of the two phases, and will inevitably introduce interface contamination, which will affect the electrical properties of the material.
There are also some second phases generated in situ that can reduce interface contamination, but they are all excessive metal phases and oxide phases that appear during the synthesis process. The distribution of these second phases is also uncertain, and it is impossible to achieve a controllable microstructure. More importantly, these second phases are not very good thermoelectric materials, so that the overall thermoelectric performance cannot be effectively improved

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Raw materials are stoichiometrically compared to Mg 2 Si 0.48 sn 0.52 After calculation and weighing, put it in a ceramic tube protected by Ar gas, heat it in a furnace at 1100°C and fully melt it, then quickly move the ceramic tube to a furnace at 860°C, and then cool it to 780°C at a cooling rate of 1°C / min. Annealed at 600°C for 100h, then mechanically ball-milled the material, then hot-pressed in vacuum at 650°C and 80MPa for 2h. In situ nanocomposite Mg-Si-Sn based thermoelectric materials were obtained.

[0019] RigakuD / MAX-2550PC X-ray polycrystalline diffractometer (XRD) was used to analyze the phase of the sample prepared in this example, and the sample was obtained as a composite material of Si-rich phase and Sn-rich phase.

[0020] The microstructure of the material was observed by FEI Sirion Field Emission Scanning Electron Microscope (FESEM), and the dispersed Si-rich nanoparticles were obtained with a diameter of 100nm. The Si:Sn atomic content ratio w...

Embodiment 2

[0023] Raw materials are stoichiometrically compared to Mg 1.998 La 0.002 Si 0.40 sn 0.60 After calculation and weighing, put it in a ceramic tube protected by Ar gas, heat it in a furnace at 1200°C and fully melt it, then quickly move the ceramic tube to a furnace at 900°C, and then cool it to 780°C at a cooling rate of 1°C / min. Annealed at 600°C for 150h, then mechanically ball-milled the material, and then vacuum hot-pressed at 650°C and 80MPa for 1h. Microstructure observation shows that the sample is a composite material of Si-rich phase and Sn-rich phase. Silicon-rich phase particles are evenly dispersed on the tin-rich substrate with a particle size of 80nm. XRD and energy spectrum analysis show that the Si:Sn atomic content ratio of the Sn-rich phase is 0.33:0.67, and the Si-rich phase Si:Sn atomic content ratio is 0.80: 0.20. The performance test shows that the thermal conductivity of the nanocomposite thermoelectric material is κ=1.9W·m at room temperature -1 K...

Embodiment 3

[0025] Raw materials are stoichiometrically compared to Mg 1.99 La 0.01 Si 0.30 sn 0.70 After calculation and weighing, put it in a ceramic tube protected by Ar gas, heat it in a furnace at 1150 °C and fully melt it, then quickly move the ceramic tube to a furnace at 900 °C, and then cool it to 780 °C at a cooling rate of 1 °C / min. Then anneal at 600°C for 100h, and then mechanically ball mill the material, then vacuum hot press at 600°C and 80MPa for 2h. Microstructure observation shows that the sample is particles of silicon-rich phase dispersed on a tin-rich phase substrate with a particle size of 50nm. XRD and energy spectrum analysis show that the Sn-rich phase Si:Sn atomic content ratio is 0.25:0.75, and the Si-rich phase Si: The Sn atomic content ratio is 0.75:0.25. The performance test shows that the thermal conductivity of the composite thermoelectric material is κ=2.0W·m at room temperature -1 K -1 , the Z value is 960×10 at 800K -6 K -1 .

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Abstract

The invention discloses an in-situ nano compound Mg-Si-Sn based thermoelectric material and a method for preparation. The chemical composition of the material is Mg2-yLaySi0.5-x Sn0.5+x, x =0.02-0.15,y=0-0.1, and the structure is that nano-particles of rich Si phase are dispersed in rich Sn grains in the material. The compound thermoelectric material with dispersed quantum dots is obtained usingan in-situ reaction, the method for preparation is simple, and the controllability is excellent. The in-situ nano compound Mg-Si-Sn based thermoelectric material of the invention has excellent thermoelectric properties.

Description

technical field [0001] The invention relates to a semiconductor thermoelectric material and a preparation method thereof, in particular to an in-situ nanocomposite Mg-Si-Sn-based thermoelectric material and a preparation method thereof. Background technique [0002] A thermoelectric material is a semiconductor material that directly converts electrical energy and thermal energy through the movement of carriers (electrons or holes). When there is a temperature difference between the two ends of the thermoelectric material, the thermoelectric material can convert heat energy into electrical energy output, which is called the Seebeck effect; on the contrary, when an electric field is applied to both ends of the thermoelectric material, the thermoelectric material can convert electrical energy into heat energy, and one end releases heat The other end absorbs heat, which is called the Petier effect. These two effects respectively enable thermoelectric materials to have a wide ran...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/14H01L35/34C22C1/05
Inventor 赵新兵张胜楠贺健张倩朱铁军T·.M·崔特
Owner ZHEJIANG UNIV
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