A programmable non volatile memory unit, array and its making method

Abstract

The invention discloses a programmable nonvolatile storage unit and an array, and the manufacturing method thereof. The device comprises a metal layer, a contact hole, a barrier layer, a plurality of polysilicons in the passive area, a plurality of polysilicons in the active area, and a substrate in the active area. A plurality of transistors are formed by the polysilicons in the active area and a substrate in the active area; a plurality of source lines are formed by the polysilicons in the passive area; A plurality of word lines are formed by the polysilicons in the passive area. A plurality of bit lines are formed by the metal lines in the metal layer. A capacitor is formed by connecting the metal layer, the connecting hole, the barrier layer, and the polisilicons in the passive area one by one. The storage unit is formed by means of corresponding series connection between the transistors and the capacitor and arrayed among the word-lines, the bit-lines and the source lines, which correspond to the storage unit. The invention improves the storage stability, decreases the area of the storage, and popularizes the application of VLSI.

Description

Technical field [0001] The present invention mainly relates to a semiconductor storage device, in particular to a programmable non-volatile memory cell, an array and a manufacturing method thereof. Background technique [0002] System on chip (SOC, System On Chip) manufacturing is mainly based on logic technology. In the process of SOC R&D and design, designers often need to integrate a large number of non-volatile memory cells inside the SOC. According to the different uses of the designed SOC, the designer selects a non-volatile storage unit of appropriate type and function as the internal storage unit of the SOC. [0003] Currently, non-volatile storage units include read-only non-volatile storage units, programmable read-only non-volatile storage units, programmable erasable read-only non-volatile storage units, and the like. Among them, the existing programmable non-volatile memory cell has the following shortcomings in its structure and design method: [0004] First of all,...

AI Technical Summary

Problems solved by technology

Therefore, the use of programmable non-volatile memory cells based on fuse or anti-fuse manufacturing technology not only increases the cost of SOC, but also greatly reduces the cost of logic devices due to the special process and special materials used in the manufacturing process. reliability

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