System for generating plasma body

Abstract

A system for generating plasma of the invention includes reaction chamber; wafer chuck disposed in the reaction chamber; a first coil on the upper and top of the reaction chamber; radio frequency power source which output radio frequency current to incite the first coil to generate plasma; and a second coil disposed on the lower of the reaction chamber. The system of the invention for generating plasma can generate more homogeneous plasma.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a system for generating plasma. Background technique [0002] Plasma is used extensively in semiconductor manufacturing processes. Plasma is usually generated in a low-pressure environment. The reaction gas is introduced into the reaction chamber and the electron flow is introduced, and the electrons are accelerated by a radio frequency (RF) electric field, so that the electrons collide with the gas molecules and transfer kinetic energy, thereby ionizing the gas molecules. become plasma. The generated plasma can be used in various semiconductor manufacturing processes, such as plasma etching, deposition, etc. European Patent Application No. 95307268.3 discloses a system for generating plasma. Fig. 1 is a simplified schematic diagram of the existing system structure for generating plasma. As shown in Fig. 1, the system includes a reaction chamber 10, and the ...

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Problems solved by technology

Due to the energy difference between the plasma central region and the edge region, the plasma energy at the edge of the wafer is relatively weak. As the deposition and etching processes alternate, the material filled and etched away at the edge of the wafer is less than that of the wafer. Central area, therefore, after the trench is filled, a peak 400 as shown in Figure 2E will appear in the wafer edge area, which will affect the subsequent wafer planarization effect

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