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Making method for CMOS thin film transistor

A technology of oxide semiconductor and manufacturing method, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of manufacturing process defects, long and complicated manufacturing process, etc.

Active Publication Date: 2008-03-26
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] However, due to the long and complicated manufacturing process, it is not only expensive, but also prone to manufacturing process defects, so how to reduce the number of photomasks has become an important issue in the development of thin film transistor array substrates

Method used

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  • Making method for CMOS thin film transistor
  • Making method for CMOS thin film transistor
  • Making method for CMOS thin film transistor

Examples

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Embodiment Construction

[0079] 2A to 2H illustrate a manufacturing method of an embodiment of a semiconductor device of the present invention. This embodiment is a schematic diagram of a manufacturing method of a thin film transistor array substrate using complementary metal oxide semiconductor thin film transistors. In the thin film transistor array substrate manufactured in this embodiment, only two photomasks are needed to manufacture the complementary metal oxide semiconductor thin film transistor and the storage capacitor, and lightly doped drain (LDD) type NMOS elements and overlap (Overlap) are designed. ) type PMOS device to effectively enhance the efficiency of CMOS thin film transistors.

[0080] First, please refer to FIG. 2A, a substrate 300 is provided, the substrate 300 has an N-type metal oxide semiconductor (NMOS) region 510, a P-type metal oxide semiconductor (PMOS) region 520 and a capacitor region 530, wherein the NMOS The region 510 includes a first doped region 511 , a lightly d...

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PUM

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Abstract

This invention relates to a manufacturing method for semiconductor elements including: carrying out first micro-image etching to form a first photoetching substratum with at least two diferent thicknesses to define a semiconductor layer of PMOS and NMOS elements by the photoetching substratum and then defining source / drain of the PMOS element by the ashed first substratum and forming a second photoetching substratum by second micro-image etching to define the grid of the PMOS and NMOS elements from the second substratum then to define a LDD of the NMOS element from the ashed second substratum.

Description

technical field [0001] The invention relates to a method for manufacturing a liquid crystal display, in particular to a method for manufacturing a complementary metal oxide semiconductor thin film transistor (CMOS TFT) suitable for a liquid crystal display. Background technique [0002] With the advent of the digital age and the rise of flat-panel displays, low-temperature polysilicon technology has become synonymous with high-quality displays. Under the demand for products such as lightness, thinness, and low power consumption, low-temperature polysilicon display products with high performance and high resolution have attracted much attention. The application fields include portable information products, digital cameras, digital video cameras, and notebook computers. , mobile phones and high-resolution large-scale video appliances, etc. [0003] Since the low-temperature polysilicon thin film transistor can overcome the problem of mobility and provide complementary circuit...

Claims

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Application Information

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IPC IPC(8): H01L21/84
Inventor 廖盈奇陈明炎陈亦伟郑逸圣
Owner AU OPTRONICS CORP
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