Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for increasing metal magnetic multilayer film coercive force

A metal magnetic, multi-layer film technology, applied in metal material coating process, coating, ion implantation plating and other directions, can solve the problems of small increase in film coercivity, increased production cost, unfavorable application, etc. Good perpendicular magnetic anisotropy, low cost, small thickness

Inactive Publication Date: 2008-03-26
UNIV OF SCI & TECH BEIJING
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, after using these methods, the coercive force of the film is not greatly improved, and further improvement is needed.
There are also researchers who use subsequent heat treatment to increase the coercive force of the film (Y.Hirayama et al.J.Appl.Phys.87, 6890 (2000)), but this will inevitably lead to an increase in production costs and is not conducive to future applications.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for increasing metal magnetic multilayer film coercive force

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] As shown in Figure 1, the sputtering process condition of the curve (a) is: the background vacuum degree of the sputtering chamber is 1×10 -5 Pa, the pressure of argon (99.99%) during sputtering is 0.9Pa. During the sputtering process, a magnetic field perpendicular to the film surface is applied to the surface of the substrate, with a magnitude of 100Oe, and the substrate rotates at a rate of 18r / min; the substrate temperature is 100°C, and the deposition temperature of the FeMn layer is 10°C;

[0010] The sputtering process condition of curve (b) is: the background vacuum of the sputtering chamber is 3×10 -5 Pa, the pressure of argon (99.99%) during sputtering is 1.2Pa. During the sputtering process, a magnetic field perpendicular to the film surface is applied to the surface of the substrate, with a magnitude of 700 Oe, and the substrate rotates at a rate of 18r / min; the substrate temperature is 200°C, and the deposition temperature of the FeMn layer is 30°C;

[00...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention is method of raising the coercive force of multilayer magnetic metal film with antiferromagnetic material. Multilayer Pt / [CoCr / Pt]5 / FeMn / Pt film is formed through depositing on cleaned glass substrate by means of using one magnetically controlled sputtering instrument. The multilayer magnetic metal film has the advantages of small thickness, excellent vertical magnetic anisotropy and high coercive force, and is suitable for use in ultrahigh density vertical magnetic record. In addition, the deposited film needs no annealing treatment, so that the present invention has also the advantages of low cost, simple preparation, etc and is suitable for future application.

Description

technical field [0001] The invention relates to a preparation method of a metal magnetic multilayer film, and in particular provides a method for improving the magnetic properties of a metal magnetic multilayer film by using an antiferromagnetic material. Background technique [0002] The metal magnetic multilayer film structure is widely used in the reading and storage technology of magnetically recorded information. For example, Dieny et al. have prepared a spin-valve multilayer film using single crystal silicon Si / tantalum Ta / nickel-iron NiFe / copper Cu / nickel-iron NiFe / iron-manganese FeMn / tantalum Ta (B.Dieny, V.S.Speriosu, J S .Metin, et al.J.Appl.Phys.69, 4774 (1991)), this spin valve multilayer film is a practical giant magnetoresistance material that has been developed rapidly in the past ten years. , computer hard disk read head and magnetoresistive random access memory (MRAM), etc. have broad application prospects. The metal magnetic multilayer film structure is a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/18C23C14/54
Inventor 于广华冯春滕蛟李宝河李明华
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com