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Variable intercrossed capacitance network based on micro mechanical capacitance serial switch and its making method

A technology of interdigital capacitor and series switch, which is applied in the field of variable interdigital capacitor network and its preparation, can solve the problems of increasing the difficulty of application, the adjustable range of capacitance is not large, and it is difficult to precisely control the capacitance, etc. performance, large capacitance variation range, and small loss

Inactive Publication Date: 2008-02-20
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The adjustable range of this kind of capacitance is not large, and it is difficult to precisely control the change of capacitance, which increases the difficulty of application

Method used

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  • Variable intercrossed capacitance network based on micro mechanical capacitance serial switch and its making method
  • Variable intercrossed capacitance network based on micro mechanical capacitance serial switch and its making method
  • Variable intercrossed capacitance network based on micro mechanical capacitance serial switch and its making method

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Embodiment Construction

[0032] The practical application of the steps of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0033]FIG. 2 and FIG. 3 are schematic diagrams of an interdigital capacitor prepared by the method of the present invention, including a gallium arsenide (GaAs) substrate 1 , a transmission line 2 and an interdigital structure 3 . The interdigitated capacitor uses a GaAs substrate 1 as a substrate, and a transmission line 2 and an interdigitated structure 3 are arranged on the upper surface of the GaAs substrate 1 . Fig. 3 shows the schematic diagram of the micromechanical capacitive series switch prepared by the method of the present invention, including gallium arsenide (GaAs) substrate 1, transmission line 4, anchor region 5, switch beam 6, pull-down electrode 7 and silicon nitride ( SiN) dielectric layer 8. The micromechanical switch uses a GaAs substrate 1 as a substrate, a transmission line 4 and a pull-down electrode ...

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Abstract

The utility model relates to a variable interdigital capacitor network based on micro mechanical capacitive series switch, which comprises a plurality of interdigital capacitors and micro electromechanical swatches (MEMS); the number of the interdigital capacitor switched into the network is determined by controlling the make-and-break of the MEMS connected with the interdigital capacitors, so as to change the capacitance value of the whole network. The utility model is characterized in that: a GaAs substrate 1 serves as the substrate of the interdigital capacitors; a plurality of transmission lines 2 and a plurality of interdigital structures are arranged on the upper surface of the GaAs substrate 1; the GaAs substrate 1 is also the substrate of the micro mechanical capacitive series swatches; a plurality of transmission lines 4 and pull-down electrodes 7 are arranged on the upper surface of the GaAs substrate 1; a SiN medium layer 8 is arranged on the transmission lines 4-2 and the pull-down electrodes 7; an anchorage area 5 is arranged above the transmission lines 4-1 and connected with one end of the switch girder 6, enabling the switch girder 6 to suspend above the SiN medium layer 8.

Description

technical field [0001] The invention proposes a variable interdigital capacitance network based on a micromechanical capacitive series switch and a preparation method thereof, belonging to the technical field of microelectromechanical systems. Background technique [0002] Variable capacitors are widely used in radio frequency and microwave circuits. They can form filtering and phase shifting networks, as well as RF circuits such as mixers, amplifiers and voltage-controlled oscillators. Compared with traditional semiconductor varactor diodes, microelectromechanical (MEMS) varactors have excellent performance in terms of insertion loss, DC power consumption, temperature characteristics, and noise. In addition, the surface micromachining process of the MEMS variable capacitor is compatible with the conventional IC planar process, and it is easy to realize on-chip integration. [0003] By searching the prior art literature, it is found that the realization of the current MEMS ...

Claims

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Application Information

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IPC IPC(8): H03H7/00H01G5/38H01G5/40
Inventor 廖小平武锐
Owner SOUTHEAST UNIV
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