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Polishing liquid for silica dioxide medium and preparation method thereof

A silicon dioxide and polishing liquid technology, applied in polishing compositions containing abrasives, water-based dispersants, etc., can solve the problems of material surface flattening processing difficulty, equipment damage, poor processing accuracy, etc., and achieve good flatness, Easy to clean, low cost effect

Inactive Publication Date: 2008-01-02
天津晶岭电子材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Silicon dioxide dielectric is a dielectric material widely used in semiconductor integrated circuits. The shape of the surface of the silicon dioxide dielectric determines the success or failure of the next step of the integrated circuit. Because the hardness of the silicon dioxide dielectric itself is large, it is necessary to planarize the surface of the material. brought great difficulty
At present, acid polishing liquid is mainly used in the world for polishing, which causes serious damage to equipment and poor processing accuracy.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] Embodiment 1: a kind of polishing fluid is characterized in that it is made up of abrasive material, tensio-active agent, pH value adjusting agent, oxidizing agent and deionized water mixing.

[0014] The concrete experimental scheme of above-mentioned said polishing liquid that is used for silica medium is as follows:

[0015] To configure 200g of polishing liquid, it is necessary to take 20% of the total weight of CeO 2 Abrasive 40g, particle size 100-120nm, 1g of fatty alcohol polyoxyethylene ether accounting for 0.5% of the total weight, 4g of hydrogen peroxide accounting for 2% of the total weight, 4g of potassium hydroxide accounting for 2% of the total weight, accounting for the total weight 75.5% deionized water.

[0016] The preparation method of polishing liquid is: first will prepare the CeO of polishing liquid 2 , fatty alcohol polyoxyethylene ether, hydrogen peroxide, potassium hydroxide and deionized water are taken according to the above formula ratio, ...

Embodiment 2

[0018] Embodiment 2: a kind of polishing fluid is characterized in that it is made up of abrasive material, surfactant, pH value regulator, oxidizing agent and deionized water mixing.

[0019] The concrete experimental scheme of above-mentioned said polishing liquid that is used for silica medium is as follows:

[0020] To configure 2000g of polishing liquid, it is necessary to take 750g of water-soluble silica sol abrasives accounting for 37.5% of the total weight, 60-80nm in particle size, 30g of hydrogen peroxide accounting for 1.5%% of the total weight, and 60g of potassium hydroxide accounting for 3% of the total weight. The total weight is 0.75% of alkanolamide 15g, and the total weight is 57.25% of deionized water.

[0021] The preparation method of the polishing liquid is as follows: firstly, the water-soluble silica sol abrasive, hydrogen peroxide, potassium hydroxide, alkyl alcohol amide and deionized water for preparing the polishing liquid are taken according to th...

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Abstract

The invention discloses a polishing liquid for silica dioxide medium, which comprises the following parts: 10-50% abradant, 0.01-0.6% soxidant, 1-6% pH adjusting agent, 0.01%-15% chelant and 28.4-88.98% deionized water, wherein pH value range of polishing liquid is 11-12, and the grain diameter is 15nm-100nm. The preparing method comprises the following steps: taking the material; filtering; purifying; mixing homogeneously. The invention doesn't corrode and pollute the device, which has the simple technology and the low cost.

Description

(1) Technical field: [0001] The invention relates to a polishing liquid and a preparation method thereof, in particular to a polishing liquid used for a silicon dioxide medium in a large-scale integrated circuit and a preparation method thereof. (two) background technology: [0002] Silicon dioxide dielectric is a dielectric material widely used in semiconductor integrated circuits. The shape of the surface of the silicon dioxide dielectric determines the success or failure of the next step of the integrated circuit. Because the hardness of the silicon dioxide dielectric itself is large, it is necessary to planarize the surface of the material. brought great difficulty. At present, acidic polishing liquid is mainly used in the world for polishing, which causes serious damage to equipment and poor processing accuracy. (3) Contents of the invention: [0003] The object of the present invention is to provide a polishing solution for silica media and its preparation method, w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09G1/04
Inventor 仲跻和李家荣周云昌高如山
Owner 天津晶岭电子材料科技有限公司
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