Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Planar display device with H-shaped sided-grid controlled structure and its production

A flat panel display and manufacturing process technology, applied in the control electrodes, the manufacture of discharge tubes/lamps, and image/graphic display tubes, etc., can solve the problems of high gate voltage and large gate current, etc.

Inactive Publication Date: 2010-11-24
ZHONGYUAN ENGINEERING COLLEGE
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In most of the current display devices, the control mode in which the gate structure is located above the carbon nanotube cathode structure is adopted. The advantage is that the control effect of the gate structure is relatively significant, but the gate voltage remains high, so The formed gate current is somewhat large, which is its disadvantage and needs further improvement

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Planar display device with H-shaped sided-grid controlled structure and its production
  • Planar display device with H-shaped sided-grid controlled structure and its production
  • Planar display device with H-shaped sided-grid controlled structure and its production

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This is a flat displayer of I shape side grid cathode structure and its production process. It includes a sealed vacuum chamber formed by a anodic glass panel, a cathode glass panel and surrounded glass frame; on the anodic glass panel is a conducting layer coated with fluorescent; a supporting wall between the anodic and cathode panel and a getter; on the cathode glass panel are a grid down-leadlayer, carbon nanotube and I shape side grid structure, which is capable of increasing the electron ejecting area and efficiency of the nanotube and increasing the control function of the grid.

Description

Flat panel display with I-shaped side gate control structure and its manufacturing process technical field The invention belongs to the fields of flat panel display technology, microelectronic science and technology, vacuum science and technology, and nano science and technology, and relates to device fabrication of flat panel field emission displays, in particular to carbon nanotube cathodes. The device manufacturing aspect of the flat panel field emission display particularly relates to a flat panel display with an I-shaped side gate control structure and its manufacturing process. Background technique Carbon nanotube cathode field emission display is a new type of flat panel display device, which makes full use of the cold field emission characteristics of carbon nanotubes, and uses the strength of an external electric field to force the tip of carbon nanotubes to emit electrons instead of using thermal energy to make field emission The energy distribution of the electr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J31/12H01J31/15H01J29/02H01J29/04H01J1/304H01J1/46H01J9/02H01J9/00
Inventor 李玉魁
Owner ZHONGYUAN ENGINEERING COLLEGE
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products