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Magnetically controlled sputtering process for synthesizing superhard film

A magnetron sputtering and new process technology, applied in sputtering plating, metal material coating process, ion implantation plating, etc., to enhance the bonding force, prevent movement and growth, and prevent mutual diffusion.

Inactive Publication Date: 2007-08-22
TIANJIN NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The preparation process of the nitride-reinforced superhard film involved in the present invention has not been reported so far

Method used

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  • Magnetically controlled sputtering process for synthesizing superhard film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Coating machine used in Example 1 (synthesis of elemental CrN thin film under new process): a domestically produced SA-6T coating machine from the School of Physics and Electronic Information of Tianjin Normal University. The specific operation steps are: a. Install the metal Cr target material to be plated on the magnetron sputtering target (5) or (6); b. ultrasonically clean and dry the base material such as the sample substrate stainless steel or silicon wafer, and (7,8) samples are installed on the turntable of the sample rack (2); c. the vacuum chamber (1) is pumped to 4.0×10 with the pumping system (3) -3 Pa and heat the vacuum chamber temperature to 250°C; d. Clean the sample substrate with Ar ion sputtering at -600V bias for 10 minutes; e. Turn on the DC power supply connected to the Cr target, and gradually increase the voltage until it glows, Then, adjust the power to 1.0kW, and pre-sputter for 10 minutes (the sample is away from the target), f. During the ent...

Embodiment 2

[0028] Embodiment 2 (synthesis of ZrN nano-element thin film under the new process) the metal Zr target material to be plated is installed on the magnetron sputtering target (5) or (6). The substrate is sputtered with Ar ions under -600V bias Clean the sample substrate by sputtering for 8 minutes, turn on the DC power supply connected to the Zr target, gradually increase the voltage until it glows, then adjust the power to 1.5kW, and pre-sputter for 15 minutes (the sample is away from the target). The performance indicators are shown in Table 1 The fourth line, that is, the nanohardness reaches 22.75GPa, and the compressive stress also decreases by 4.8GPa. All the other are with embodiment 1.

Embodiment 3

[0029] Embodiment 3 (synthesis of CrN / ZrN nano-multilayer film under the new process) concrete steps are: the metal Cr to be plated, the Zr target material is installed on the respective magnetron sputtering targets (5), (6), and the base material Clean the sample substrate with Ar ion sputtering at -600V bias for 10 minutes; pre-sputter Cr and Zr targets for 20 minutes, turn on the DC power supply of Cr and Zr targets at the same time, gradually increase the voltage until it glows, and adjust the power to 1kW, 1.5kW, pre-sputtering for 20 minutes (the sample is away from the target), the Cr and Zr metal targets maintain the power; then, without substrate bias, first deposit 55nm of pure metal Cr on the sample substrate; and gradually control the introduction of 0.8ml N of / s traffic 2 Gas and NH at a flow rate of 0.1ml / s 3 At the same time, the substrate bias voltage was gradually increased to -200V. At this time, the stepper motor (9) was turned on to allow the sample to ro...

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Abstract

The present invention relates to magnetically controlled sputtering process for synthesizing superhard film with high wear resistance. The process includes exciting plasma with a DC power source to sputter metal target, vacuuming to 4.0x10<-3> Pa and heating to 250 deg.c, Ar ion sputtering to clean the substrate at bias voltage -600 V for 5-10 min, pre-sputtering metal target for 10-20 min, turning on the power source and increasing the voltage gradually to regulate the power to 1 KW or 1.5 KW to strike glow discharge, lowering the bias on substrate to -200 V and maintaining target power in 1 KW or 1.5 KW for depositing, and introducing N2 in 0.5-0.8 ml / s and NH3 in 0.1-0.52 ml / s to maintain the total work pressure of 0.26 Pa. The synthesized film has high hardness, high wear resistance, high adhesion and proper stress, and may be applied in strengthening the surface of tools and dies.

Description

technical field [0001] The invention belongs to the field of surface strengthening films for various cutting tools and moulds. In particular, it relates to a new process for synthesizing thin films by magnetron sputtering technology. Background technique [0002] At present, among the surface strengthening films for various cutting tools and molds, transition metal nitride films are the preferred materials. Mainly because they have a certain high hardness, high friction and wear resistance, and good chemical stability. However, they also have defects such as high brittleness, high residual stress, and poor bonding force with the substrate, which greatly affect their application range. In practical applications, it is almost impossible to further improve their performance, that is, increase hardness, improve wear resistance, bond with the substrate, and take into account low brittleness, relatively low stress, and high thickness, because, with As the thickness of the film ...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/54C23C14/14
Inventor 李德军刘谦祥王明霞张晶晶杨瑾
Owner TIANJIN NORMAL UNIVERSITY
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