Optical-mechanical double-layer structural uncooled infrared imaging focal plane array detector

An uncooled infrared and focal plane array technology is applied in the field of opto-mechanical double-layer structure uncooled infrared imaging focal plane array detectors, which can solve the problems of large pixel area and reflection, and achieve pixel area reduction and detection. Sensitive, overall length-increasing effect

Active Publication Date: 2010-03-17
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

[0009] In view of this, the main purpose of the present invention is to provide an optical-mechanical double-layer structure uncooled infrared imaging focal plane array detector, to overcome the problem of infrared reflection of the silicon substrate in the pattern area, improve detection sensitivity, and solve the problem of device imaging. Solve the problem of large pixel area, improve the resolution and clarity of detection

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  • Optical-mechanical double-layer structural uncooled infrared imaging focal plane array detector
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  • Optical-mechanical double-layer structural uncooled infrared imaging focal plane array detector

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[0032] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0033] Such as figure 1 Show, figure 1 Schematic diagram of the structure of the photo-mechanical double-layer uncooled infrared imaging focal plane array detector provided by the present invention. The detector is composed of micro-cantilever units in a way of covering and nesting each other. The micro-cantilever unit includes an infrared absorbing plate 1, a thermally deformable structure 2, and a support beam 3. The infrared absorbing plate of each micro-cantilever unit 1 is covered on the thermally deformed structure 2 of another adjacent micro-cantilever unit to form an array of micro-cantilever units covering and nesting each other.

[0034] Such as figure 2 as shown, figure 2 The top view of the micro-cantile...

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Abstract

The invention discloses an optical-mechanical focal plane array detector of uncooled infrared imaging with double layer, relating to a technical field of the focal plane array detector of uncooled infrared imaging in an infrared imaging system. The detector comprises micro-cantilever units mutually covered, tiled and embedded ; the micro-cantilever unit comprises a thermal deformation structure, an infrared absorption structure and a support beam; the thermal deformation structure is fixed on and connected with the support beam; the infrared absorption structure and the thermal deformation structure are fixedly connected on different planes; infrared absorption plates of each micro-cantilever unit are covered above the thermal deformation structure of the micro-cantilever next to the infrared absorption plates to form a micro-cantilever unit array mutually covered, tiled and embedded. The adoption of the invention solves the problem that silicon substrate reflects the infrared in graphic area, facilitates detection sensitivity; solves the problem of over-large elemental area of the devices and promotes resolution and definition of the detection.

Description

technical field [0001] The invention relates to the technical field of an uncooled infrared focal plane array detector in an infrared imaging system, in particular to an optical-mechanical double-layer uncooled infrared imaging focal plane array detector. Background technique [0002] Infrared radiation detection devices are used to convert invisible infrared radiation into visible images. According to different detection principles, traditional infrared radiation detection devices can be roughly divided into two categories: quantum type and thermal type infrared radiation detectors. [0003] Quantum-type infrared radiation detectors convert the energy of infrared photons into the energy of electrons. Since the energy of the excited electrons of infrared photons of 8 to 14 microns is equivalent to the energy generated by the thermal motion of electrons at room temperature, it is necessary to maintain the temperature of the detector at the temperature of liquid nitrogen (abo...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/02G01J5/02G01J5/38
Inventor 焦斌斌李超波陈大鹏叶甜春
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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