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Flat-panel display device with side gate-modulated round-top cathode type emitting structure and its preparing process

A flat-panel display, manufacturing process technology, used in cold cathode manufacturing, cathode ray tube/electron beam tube, electrode system manufacturing, etc.

Inactive Publication Date: 2009-08-12
ZHONGYUAN ENGINEERING COLLEGE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in most of the currently produced carbon nanotube cathode field emission display devices, although the reported grid voltage has greatly improved in value, there is still a long way to go when it is connected with a conventional integrated drive circuit. A very long distance, the current device gate operating voltage is far higher than the voltage that the integrated circuit can withstand

Method used

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  • Flat-panel display device with side gate-modulated round-top cathode type emitting structure and its preparing process
  • Flat-panel display device with side gate-modulated round-top cathode type emitting structure and its preparing process
  • Flat-panel display device with side gate-modulated round-top cathode type emitting structure and its preparing process

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Embodiment Construction

[0039] The present invention will be further described below with reference to the drawings and embodiments, but not limited to these embodiments.

[0040] The flat-panel display with a side-grid-controlled circular mesa cathode emission structure includes a sealed vacuum chamber composed of an anode glass panel [13], a cathode glass panel [1] and surrounding glass frames [18]; On the anode glass panel, there is an anode conductive layer [14] and a phosphor layer [16] prepared on the anode conductive layer; on the cathode glass panel, there are cathode lead layer [10], carbon nanotubes [12] and side gate Cathode type emissive structure with circular mesa; support wall structure [17] and getter [19] accessory elements between the anode glass panel and the cathode glass panel.

[0041] The side-gate-controlled circular mesa cathode-type emission structure includes a cathode glass panel [1], an insulating layer [2], a gate lead layer [3], a raised gate layer [4], and a raised gat...

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Abstract

The invention relates to a flat-panel display with side-grid-controlled circular mesa cathode emission structure and its manufacturing process, including a sealed vacuum chamber composed of an anode glass panel, a cathode glass panel and surrounding glass frames; An anode conductive layer and a phosphor layer prepared on the anode conductive layer; a support wall structure between the anode glass panel and the cathode glass panel and an accessory component of the getter; a cathode lead layer, carbon nanotubes and The side-gate-controlled circular mesa cathode emission structure can further improve the display brightness, display image quality and resolution of the overall device; it has the advantages of stable and reliable manufacturing process, simple manufacturing process, low manufacturing cost and simple structure.

Description

technical field [0001] The invention belongs to the fields of flat panel display technology, microelectronic science and technology, vacuum science and technology, and nano science and technology, and relates to device fabrication of flat panel field emission displays, in particular to carbon nanotube cathodes. The device manufacturing aspect of the flat panel field emission display particularly relates to a flat panel display with a side-gate-controlled circular mesa cathode emission structure and its manufacturing process. Background technique [0002] The display is an important output device in information display technology. Its function is to convert the emitted electrical signal into a light signal after a series of processing, and finally display it in the form of text and images. Among many flat panel display devices, carbon nanotube cathode field emission display is a new type of planar device, which has many advantages such as high brightness, high definition, low...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J31/12H01J31/15H01J29/02H01J29/04H01J1/304H01J9/02H01J9/00
Inventor 李玉魁
Owner ZHONGYUAN ENGINEERING COLLEGE
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