An organic field effect transistor and manufacture method thereof

Abstract

The invention discloses an organic field effect transistor and a preparation method thereof. The organic field effect transistor provided by the present invention includes a substrate as a gate, an insulating layer on the substrate, a source electrode and a drain electrode on the insulating layer, wherein a gate is arranged between the source electrode and the drain electrode. Organic semiconductor single crystal micro / nano material, its two ends are connected with source electrode and drain electrode through two mutually spaced metal films, the distance between the two metal films is 5-20 microns. The organic field effect transistor of the present invention has the excellent characteristics of high mobility and low threshold voltage, and the preparation method adopted has the following advantages: 1) no organic solvent is used in the whole process, which avoids damage to the surface of nanomaterials; 2) all The required equipment is relatively simple, avoiding the irradiation and damage of nanowires by high-energy particles; 3) devices with controllable specifications can be prepared; 4) the structure of field effect transistors can be controlled and good electrode contacts can be formed.

Description

technical field [0001] The invention relates to an organic field effect transistor and a preparation method thereof. Background technique [0002] Organic field-effect transistors have attracted attention in recent years due to their potential applications in organic / molecular electronics. Organic field-effect transistors mainly include organic semiconductor conductive layers, insulating layers, and source, drain, and gate electrodes. Most of them use organic thin films as the conductive layer. Due to the presence of lattice disorder and grain boundary defects in thin films, the intrinsic properties of organic semiconductors are often masked, and the improvement of device mobility is also limited, and the higher defect concentration in thin films greatly increases the threshold of organic field effect transistors. Voltage. Low mobility and high threshold voltage overshadow the advantages of organic field-effect transistors while limiting their application in circuits. Due...

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Problems solved by technology

However, the mechanical properties of organic crystals are generally poor, and they are easily broken and damaged during ultrasonic dispersion, which limits the use of ultrasonic dispersion

Moreover, the method of ultrasonic dispersion has great randomness, and the size and position of dispersed crystals cannot be artificially controlled.

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