Method for improving emission property of deposited carbon nano-tube thin film electronic field by electrophorisis method

A technology of emission performance and carbon deposition, applied in the manufacture of discharge tubes/lamps, electrophoretic plating, nanotechnology, etc., can solve problems such as restricting the practical application of electrophoresis, easy peeling of carbon nanotube films, unstable field emission current, etc. , to enhance the resistance to ion bombardment, eliminate the interface barrier, and improve the emission stability.

Inactive Publication Date: 2009-04-22
TIANJIN UNIV
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Problems solved by technology

However, the adhesion between the carbon nanotube film deposited by electrophoresis and the substrate is relatively weak, and the carbon nanotube film is easy to peel off during the field emission process, resulting in unstable field emission current, which restricts the electrophoresis method in the carbon nanotube field emission cathode. Practical application in fabrication [Applied Surface Science, 215, 232(2003)]

Method used

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  • Method for improving emission property of deposited carbon nano-tube thin film electronic field by electrophorisis method
  • Method for improving emission property of deposited carbon nano-tube thin film electronic field by electrophorisis method
  • Method for improving emission property of deposited carbon nano-tube thin film electronic field by electrophorisis method

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Embodiment 1

[0023] (1) Coating a transition metal thin film on the base material by radio frequency magnetron sputtering coating method. The transition metal is Ti, and the base material is p-type (100) Si sheet. The specific sputtering coating conditions are as follows: adjust the sputtering power to 80W so that the deposition rate is 0.22nm / s, the sputtering time is 15min, and the sputtering vacuum is 3×10 -4 Pa, the thickness of the plated Ti film is 200nm.

[0024] (2) The Si substrate coated with Ti film was used as the cathode, and the carbon nanotube film was deposited by electrophoresis, and the film thickness was 30 μm. The electrophoretic fluid consists of 0.3g carbon nanotubes and 0.2g Mg(NO 3 ) 2 ·6H 2 O is dispersed in 200ml of isopropanol, ultrasonically oscillated for 2 hours, and then settled for 1 hour to obtain it; the process conditions during electrophoresis are: electrophoresis voltage 100V, electrophoresis time 2min, distance between cathode and anode 2cm; the an...

Embodiment 2

[0027] (1) Coating a transition metal thin film on the base material by vacuum evaporation coating method. The transition metal is Ta, and the base material is p-type (100) Si sheet. The process conditions are: the deposition rate is 0.4nm / s, and the deposition vacuum is 6×10-5 Pa, deposition time 4min, sputtering vacuum 3×10 -4 Pa, the thickness of the plated Ta film is 100nm.

[0028] (2) The Si substrate coated with Ta film was used as the cathode, and the carbon nanotube film was deposited by electrophoresis, and the film thickness was 30 μm. The electrophoretic fluid consists of 0.3g carbon nanotubes and 0.2g Mg(NO 3 ) 2 ·6H 2 O is dispersed in 200ml isopropanol, ultrasonically oscillated for 2 hours, and then settled for 1 hour; the anode used is a platinum electrode; the process conditions during electrophoresis are: electrophoresis voltage 60V, electrophoresis time 5min, distance between cathode and anode 3cm; The nanotubes are multi-walled carbon nanotubes prepar...

Embodiment 3

[0031] (1) Coating a transition metal thin film on the base material by radio frequency magnetron sputtering coating method. The transition metal is Hf, and the base material is p-type (100) Si sheet. The process conditions are: adjust the sputtering power to 200W so that the deposition rate is 0.8nm / s, the sputtering time is 8min, and the sputtering vacuum is 3×10 -4 Pa, the thickness of the plated Hf film is 400nm.

[0032] (2) The Si substrate coated with Ta film was used as the cathode, and the carbon nanotube film was deposited by electrophoresis, and the film thickness was 25 μm. The electrophoretic fluid consists of 0.3g carbon nanotubes and 0.2g Mg(NO 3 ) 2 ·6H 2 O is dispersed in 200ml of isopropanol, ultrasonically oscillated for 2 hours, and then settled for 1 hour; the anode used is a stainless steel electrode; the process conditions during electrophoresis are: electrophoresis voltage 60V, electrophoresis time 5min, distance between cathode and anode 3cm; The ...

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Abstract

A method for improving performance of carbon nanotube film electronic field emission by electrophoresis deposit means includes plating transition metal film on conductive substrate material by physical gas phase depositing process, utilizing plated conductive substrate as cathode to deposit carbon nanotube film on said cathode through electrophoresis depositing process and carrying out annealing treatment on cathode deposited with carbon nanotube film for raising field emission current density.

Description

technical field [0001] The invention relates to a method for improving the properties of carbon nanotubes, more specifically, a method for improving the electron field emission performance of electrophoresis deposited carbon nanotube films. Background technique [0002] Field emission display technology is a new flat panel display technology that has developed rapidly since the mid-1990s. The field emission display combines the high-definition image quality of the cathode ray tube, the thinness of the liquid crystal display, and the large area of ​​the plasma display. It has excellent performance in terms of operating temperature range and the like, and has a broad market and good application prospects in the field of flat panel display [Physica B323, 165 (2002)]. Among them, the cold cathode material is the core component of the field emission display. The traditional Spindt-type conical cold cathode has complex processing technology, which makes it difficult to increase ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J9/02C23C14/24C23C14/22C23C14/14C25D13/00C01B31/02B82B3/00
Inventor 胡明秦玉香李海燕梁继然刘志刚
Owner TIANJIN UNIV
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