Dual-voltage three-state buffer circuit

A tri-state buffer and dual-voltage technology, applied in the direction of logic circuit, logic circuit connection/interface layout, logic circuit coupling/interface using field effect transistors, etc., can solve the excessive instability of the inverter ratio and increase energy consumption Circuit layout area, etc.

Active Publication Date: 2008-12-17
TAIWAN SEMICON MFG CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Although buffer 100 reduces post-driver crossover current and uses two-level shifters 102 and 104 to convert low-level voltages to high-level voltages, due to timing issues, the inverters driving post-driver transistors 112 and 114 Ratio is too unstable
In addition, level shifters 102 and 104 and inverters 156 and 158 increase power consumption and circuit layout area

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dual-voltage three-state buffer circuit
  • Dual-voltage three-state buffer circuit
  • Dual-voltage three-state buffer circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] In order to make the above objects, features and advantages of the present invention more comprehensible, a preferred embodiment will be described in detail below together with the accompanying drawings.

[0035] The present invention proposes a dual-voltage tri-state buffer circuit with a tri-state level shifter, which can simplify circuit design. As such, the present invention reduces circuit layout area and reduces power consumption through dual voltage circuits.

[0036] The present invention will improve the design of dual voltage tri-state buffers.

[0037] FIG. 2A shows a dual-voltage tri-state buffer circuit 200 according to a first embodiment of the present invention. Circuit 200 includes a level shifter and pull-up and pull-down switches.

[0038] Like buffer 100, circuit 200 also switches between three different states and has two modes of operation: normal mode and tri-state mode. The normal mode occurs when the enable pin 202 is set to a low level, and t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a double-voltage three-state buffer circuit, which includes a three-state logic control unit, a level shifter, and a post-driver circuit. The tri-state logic control unit operates at a low supply voltage. The level shifter receives one or more input signals from the tri-state logic control unit, and operates with the output control circuit to control two differential output terminals of the level shifter. The post-driver circuit has a PMOS transistor and an NMOS transistor connected in series, and is driven by the two differential output terminals of the level shifter. Among them, the level shifter, the output control circuit, and the post-driver circuit operate at a high supply voltage. When the tri-state logic control unit generates multiple input signals to place the post-driver circuit in a high-impedance state, the output control circuit operates with the level shifter to turn off the PMOS and NMOS transistors to isolate the level shifter from the high supply Voltage.

Description

technical field [0001] The present invention relates to an integrated circuit, and in particular to an improved design of a dual-voltage tri-state buffer circuit using a tri-state level shifter. Background technique [0002] The existing dual-voltage tri-state buffer includes a two-level shifter for controlling a post driver circuit, and it is composed of PMOS and NMOS transistors. The two-level shifter converts lower voltage signals into higher voltage signals. The post-driver circuit determines the output of the entire circuit by deciding which transistors are on or off. However, since the driving of the PMOS transistor is slower than that of the NMOS transistor, the time required to turn on or off the PMOS and NMOS transistors is different. Since different input signals may establish different paths for signal transmission, and some paths may take more time, therefore, the time required for each level shifter to output signals is also different. According to these timi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/0185
CPCH03K19/0013H03K19/0016H03K19/09429
Inventor 陈国基陈克明
Owner TAIWAN SEMICON MFG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products