Substrate processing method, substrate processing program and storage medium

Abstract

The invention relates to a base plate processing device. Before starting RIE processing, the helium gas pressure is increased; from the beginning of vacuuming the heat transferring gas supplying pipes 49, 50, after delay time, measuring the flowing helium gas pressure in the main discharge pipes 70 and 71 (stage S74 ); setting the supplied pressure difference basing on the measured pressure in main discharge pipes 70, 77 and the specified helium in the RIE processing scheme, selecting acceleration discharge from the acceleration process form that corresponds to the pressure difference and acceleration discharge, setting acceleration discharge in the acceleration process (stage S75), and executing the acceleration process by using the acceleration discharge (stage S76).

Description

technical field [0001] The present invention relates to a substrate processing method, a substrate processing program, and a storage medium, and particularly to a substrate processing method for supplying helium gas to the back surface of a substrate whose surface is processed. Background technique [0002] Conventionally, in a processing chamber (hereinafter referred to as a chamber) of a plasma processing apparatus, a substrate is placed on a stage having a cooling mechanism, and plasma processing is performed on the substrate. During the plasma processing of the substrate, a heat transfer gas, such as helium (He), is supplied between the loading table and the back surface of the substrate, and the heat of the substrate is transferred by the helium to the loading table to control the temperature of the substrate ( For example, refer to Patent Document 1). [0003] Helium gas is supplied from a heat transfer gas supply device (back pressure unit) provided under the mountin...

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Problems solved by technology

[0008] However, the pressure in the piping at the time of starting the acceleration program is not necessarily zero because the helium gas supplied in the previous plasma treatment usually remains in the piping.

[0009] Therefore, the increased flow rate of helium gas set according to the absolute value of the predetermined pressure of helium gas stipulated in the scheme has an excess with respect to the flow rate required to reach the predetermined pressure of helium gas stipulated in the scheme, thus, The problem that the controllability of the heat transfer gas supply device deteriorates, such as the pressure in the piping exceeds the predetermined pressure, etc.

[0010] In addition, deterioration of the controllability of such a heat transfer gas supply device delays reaching a predetermined pressure, resulting in a decrease in productivity

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