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High brightness gallium nitrate kind LED structure

A technology of light-emitting diodes and gallium nitride, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of external quantum efficiency limitations, achieve the effect of improving external quantum efficiency and luminous efficiency, and avoiding internal total reflection

Inactive Publication Date: 2008-02-27
FORMOSA EPITAXY INCORPORATION +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The external quantum efficiency of GaN-based LEDs is thus usually considerably limited

Method used

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  • High brightness gallium nitrate kind LED structure
  • High brightness gallium nitrate kind LED structure
  • High brightness gallium nitrate kind LED structure

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Embodiment Construction

[0027] FIG. 1 is a schematic diagram of Embodiment 1 of the structure of a high-brightness GaN-based light-emitting diode according to the present invention. As shown in Figure 1, this embodiment is based on C-Plane or R-Plane or A-Plane alumina single crystal (Sapphire) or silicon carbide (6H-SiC or 4H-SiC) as the substrate 10, other substrates can be used 10 materials also include Si, ZnO, GaAs or spinel (MgAl 2 o 4 ), or single-crystal oxides with lattice constants close to those of nitride semiconductors. Then an aluminum gallium indium nitride (AlGaN) with a specific composition is formed on one side of the substrate 10 a Ga b In 1-a-b N, 0≦a, b<1, a+b≦1) constitute the buffer layer 20 and the n-type contact layer 30 on the buffer layer, the n-type contact layer 30 is made of gallium nitride (GaN) Class material composition. Then, an active layer 40 is formed on the n-type contact layer 30, and the active layer 40 is composed of InGaN. A negative electrode 42 is ad...

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Abstract

The invention advances a structure of high brightness GaN LED, which uses silicon nitride, magnesium nitride or silicon- and magnesium- highly doped aluminum gallium indium nitride to form a mask buffer layer comprising plural random distributed crowded masks, then growing a p-type rough contact layer composed of p-type aluminum gallium indium nitride which is not directly grown on the mask buffer layer but grown from the top surface of the part of the p-type contact layer unmasked by the mask buffer layer, and not stop growing the p-type rough contact layer until it extends to exceed the masks of the buffer layer by a certain height. The structure can roughen the surface of the GaN LED, avoiding the inner all reflection and then raise the outer quantum efficiency and light emitting efficiency.

Description

technical field [0001] The invention relates to a gallium nitride light-emitting diode, in particular to a structure of a high-brightness gallium nitride light-emitting diode whose surface is roughened. Background technique [0002] Gallium Nitride (GaN)-based light-emitting diodes, because light-emitting diodes of various colors can be produced by controlling the composition of materials, its related technologies have become the focus of active research and development in the industry and academia in recent years. One of the research focuses of GaN-based light-emitting diodes in academia and industry is to understand the light-emitting characteristics of GaN-based light-emitting diodes, and then propose methods to improve their luminous efficiency and brightness. This high-efficiency and high-brightness gallium nitride-based light-emitting diode will be effectively used in outdoor display boards, vehicle lighting and other fields in the future. [0003] The luminous effici...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/12H01L33/38
Inventor 武良文凃如钦游正璋温子稷简奉任
Owner FORMOSA EPITAXY INCORPORATION
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