Inductive coupling plasma device

Abstract

The present invention relates to an inductively-coupled plasma device, including inductively-coupled plasma cavity body, inductively-coupled coil and coil rotating device. The inductively-coupled coil is positioned over the inductively-coupled plasma cavity body, the inductively-coupled coil is mounted on the coil rotating device, the coil rotating device is fixed on the inductively-coupled plasma cavity body, the rotation of said coil rotating device can drive the inductively-coupled coil and make it be rotated, the coil rotating device is formed from motor, fixed plate and support. Said invention can make the plasma produced in reaction cavity chamber be uniformly distributed, so that the wafer processing quality and stability can be greatly raised.

Description

Technical field [0001] The invention relates to a semiconductor wafer processing equipment, in particular to an inductively coupled plasma device. Background technique [0002] At present, with the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires companies that produce integrated circuits to continuously improve the processing capabilities of semiconductor wafers. Among them, inductively coupled plasma equipment (ICP) is widely used in wafer etching processes for manufacturing integrated circuits (IC) and MEMS devices. Its working principle is: in a low-pressure environment, the reactive gas is excited by radio frequency power to produce ionization to form a plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, and free radicals. These active reactions Genes and the surface of the etched material undergo various physical and ...

AI Technical Summary

Problems solved by technology

Especially after the processing size of the wafer 5 increases from 100 mm to 300 mm, and the volume of the reaction chamber 3 increases accordingly, the plasma density excited by the planar inductively coupled coil 4 has a large asymmetry in azimuth angle, so it can only rely on Diffusion to compensate for peripheral low-density regions

As a result, the etching rate of the wafer is not uniform, the quality of semiconductor processing is unstable, and the product use effect is affected.

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