Method for preparing microlite silicon

Abstract

A process for preparing microcrystal silicon includes preparing non-crystal silicon film on glass substrate, putting it in vacuum annealing furnace, and vacuum annealing while radiating it by ultraviolet ray for phase change to obtain microcrystal silicon film. Its advantages are high speed and high crystallinity.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials and relates to a silicon material, in particular to a method for converting amorphous silicon into microcrystalline silicon. Background technique [0002] The mobility and photoelectric conversion efficiency of microcrystalline silicon are higher than those of amorphous silicon, and compared with polycrystalline silicon, the preparation process is simple and the cost is low, so it is widely used in the preparation of thin film transistors and solar cells. [0003] At present, the method of preparing microcrystalline silicon is mainly direct deposition method, including ultra-high frequency plasma enhanced chemical vapor deposition (VHF PECVD), hot wire chemical vapor deposition (HW CVD) and electron cyclotron resonance chemical vapor deposition (ECR CVD). . [0004] The very high frequency plasma chemical vapor deposition (VHF PECVD) method is based on H 2 Diluted SiH 4 The gas ...

AI Technical Summary

Problems solved by technology

The problem in the preparation of microcrystalline silicon μc-Si material by this method is that its growth rate is low (<1A) which is not conducive to reducing manufacturing costs

[0007] The above-mentioned preparation of microcrystalline silicon thin films by direct deposition method has the following problems to varying degrees: the growth rate is low, which is not conducive to reducing the manufacturing cost; the crystallinity is low, about 50%; the mobility is low, and the photoelectric conversion efficiency is low

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