Method of forming a layer on a semiconductor substrate

Abstract

In a method of forming a thin layer for a semiconductor device through an ALD process and a CVD process in the same chamber, a semiconductor substrate is introduced into a processing chamber, and an interval between a showerhead and the substrate is adjusted to a first gap distance. A first layer is formed on the substrate at a first temperature through an ALD process. The interval between the showerhead and the substrate is additionally adjuted to a second gap distance, and a second layer is formed on the first layer at a second temperature through a CVD process. Accordingly, the thin layer has good current characteristics, and the manufacturing throughput of a semiconductor device is improved.

Description

CROSS-REFERENCE OF RELATED APPLICATION[0001]This application relies for priority upon Korean Patent Application No. 2004-51855 filed on Jul. 5, 2004, the contents of which are herein incorporated by reference in their entirety.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a method of forming a layer on a semiconductor substrate and an apparatus for performing the same. More particularly, the present invention relates to a method of forming a layer using an atomic layer deposition (ALD) method followed by a chemical vapor deposition (CVD) method in the same processing chamber and an apparatus for performing the same.[0004]2. Description of the Related Art[0005]Modern semiconductors use extremely small metal wiring. Whereas in the past aluminum (Al) has been the material of choice for such wiring due to its low specific resistance and ease of use in processing, extremely dense circuits owing to better manufacturing techniques require ...

AI Technical Summary

Benefits of technology

[0014]According to the present invention, the thin layer for a semiconductor device is formed through both an ALD process and a CVD process in the same chamber. The thin layer includes a first layer formed through the ALD process and a second layer formed through the CVD process. As a result, when a diffusion barrier layer or an upper electrode layer of a capacitor of a semiconductor device is formed as the thin layer of the present invention, a diffusion of impurities into an underlying layer is sufficiently prevented by the first layer formed through the ALD process, thereby preventing the deterioration of the underlying layer, the diffusion barrier layer and the upper electrode layer in a view of material characteristics. In addition, the second layer is formed through the CVD process, thereby improving a manufacturing throughput of a semiconductor device. Accordingly, the characteristics of the thin layer for a semiconductor device are remarkably improved with a superior manufacturing throughput and rare manufacturing failures.

Problems solved by technology

Whereas in the past aluminum (Al) has been the material of choice for such wiring due to its low specific resistance and ease of use in processing, extremely dense circuits owing to better manufacturing techniques require better conductor materials.

Unfortunately, copper has a major drawback in that copper atoms tend to diffuse into the silicon of the semiconductor substrate, thus affecting the performance of the semiconductor device.

Additionally, copper is more difficult to dry-etch than aluminum and is difficult to adhere to other materials, thereby presenting an uneven surface between the copper and a contiguous material.

However, titanium nitride (TiN) as a diffusion material creates several problems.

Most importantly, titanium nitride is difficult to apply to a semiconductor substrate.

Application of TiN via physical vapor deposition (PVD) often results in poor step coverage thus making such application method ill suited during highly integrated semiconductor devices.

Application of TiN via a chemical vapor deposition (CVD) process often results in diffusion of chloride ions (Cl−) from a base reactant gas into an underlying layer, thus resulting in degraded electrical characteristics of the resulting device.

Finally, application of TiN via an atomic layer deposition (ALD) is an extremely slow process thereby severely reducing manufacturing productivity.

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