Versatile system for triple-gated transistors with engineered corners

Abstract

The present invention provides a system for producing a triple-gate transistor segment (300), utilizing a standard semiconductor substrate (302). The substrate has a plurality of isolation regions (304) formed along its upper surface in a distally separate relationship, defining a channel region (306). A form structure (308) is disposed atop the isolation regions, and defines a channel body area (310) over the channel region. A channel body structure (316) is disposed within the channel body area, and is engineered to provide a blunted corner or edge (318) along a perimeter of its upper exposed surface. The form structure is then removed, and subsequent processing is performed.

Description

RELATED APPLICATIONS[0001]This application is related to U.S. patent application Ser. No. 10 / 696,130, filed on Oct. 29, 2003, entitled MULTIPLE-GATE MOSFET DEVICE WITH LITHOGRAPHY INDEPENDENT SILICON BODY THICKNESS AND METHODS FOR FABRICATING THE SAME, and to U.S. patent application Ser. No. 10 / 696,539, filed on Oct. 29, 2003, entitled TRIPLE GATE MOSFET TRANSISTOR AND METHODS FOR FABRICATING THE SAME, U.S. Pat. No. 6,927,106.TECHNICAL FIELD OF THE INVENTION[0002]The present invention relates generally to the field of semiconductor devices and, more particularly, to apparatus and methods for the production of triple-gated transistors.BACKGROUND OF THE INVENTION[0003]The continual demand for enhanced integrated circuit performance has resulted in, among other things, a dramatic reduction of semiconductor device geometries, and continual efforts to optimize the performance of every substructure within any semiconductor device. A number of improvements and innovations in fabrication pr...

AI Technical Summary

Benefits of technology

The present invention provides a system and methods for producing multiple-gated transistor structures with selectively engineered corners and edges. These structures have improved performance and reliability compared to conventional methods. The system is adaptable to a wide variety of commercial fabrication technologies, making it easy and cost-effective. The invention also provides a protective form about the perimeter of a silicon body structure, which allows for tailoring targeted portions without altering the remainder of the structure. The invention also provides a semiconductor device segment with a blunted edge or corner along a perimeter of its top surface. Overall, the invention optimizes device performance and reliability while solving difficulties associated with conventional approaches.

Problems solved by technology

The increased packing density of the integrated circuit generates numerous challenges to the semiconductor manufacturing process.

Unfortunately, most conventional fabrication processes (e.g., lithography) are limited in their ability to reliably produce transistor features of extremely small dimension.

In addition to fabrication process limitations, performance limitations are also a barrier to significant reductions in planar transistor gate lengths.

Typically, reduced gate length can result in short channel effects that degrade transistor performance.

In short channel devices, however, the channel region is also affected by source and drain voltages—causing an increased off-state current, due to VT roll-off, decreased sub-threshold slope, and degraded output current.

Although such approaches are capable of producing multiple gate devices that offer improved performance over planar transistor designs, a number of production, performance and reliability issues still preclude their commercial viability in high-volume semiconductor fabrication.

SOI wafers tend to be significantly more expensive than ordinary silicon substrates.

Considerable overhead is added to fabrication processes by the etching processes involved in forming channel structures.

Furthermore, channel surfaces exposed to the etch processes can incur damage that degrades their structural and electrical integrity throughout the lifetime of the device.

Even if etch processes successfully form a channel structure, the physical form of the resulting channel structure may inherently cause a number of problems.

Sharp angles within semiconductor structures introduce structural discontinuities and instabilities (e.g., lattice structure instability) to those structures.

Unfortunately, most such approaches have no way to selectively round only the upper edges of the channel block.

This creates a number of performance problems, and complicates subsequent processing steps.

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