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Semiconductor treatment composition

a technology of semiconductors and compositions, applied in the direction of lapping machines, other chemical processes, polishing compositions, etc., can solve the problems of affecting the performance of the polishing machine, the damage of the polishing surface, and the contaminated surface of the polishing waste, so as to improve the efficiency and reduce the damage applied, the effect of excellent filtration characteristics

Inactive Publication Date: 2019-04-25
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The treatment composition reduces damage to metal wires and efficiently removes contaminants, maintaining the integrity of the semiconductor surface while preventing excessive etching and corrosion, thereby improving productivity and surface quality.

Problems solved by technology

A fatal device defect may occur if such polishing waste remains.
Since an iron ion included in the CMP slurry is easily adsorbed on the surface of the polishing target, the polishing target surface is easily contaminated with iron.
In this case, however, the polished surface is easily etched and damaged.

Method used

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  • Semiconductor treatment composition
  • Semiconductor treatment composition
  • Semiconductor treatment composition

Examples

Experimental program
Comparison scheme
Effect test

application example 2

[0011]The concentrated semiconductor treatment composition according to Application Example 1 may be used in a 1 to 500-fold diluted state.

application example 3

[0012]According to a second aspect of the invention, there is provided a semiconductor treatment composition including potassium, sodium and a compound A represented by the following general formula (1), and being used without being diluted,

[0013]the semiconductor treatment composition having a potassium content MK (ppm) and a sodium content MNa (ppm) that satisfy MK / MNa=1×10−1 to 1×104:

wherein each of R1 to R4 is a hydrogen atom or an organic group, independently, and M− is an anion.

application example 4

[0014]The semiconductor treatment composition according to any one of Application Examples 1 to 3 may have a viscosity less than 5 mPa·s at 25° C.

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PUM

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Abstract

A semiconductor treatment composition includes potassium, sodium, and a compound A represented by the formula (1), and has a potassium content MK (ppm) and a sodium content MNa (ppm) that satisfy MK / MNa=1×10−1 to 1×104.

Description

CROSS-REFERENCE TO RELATED PATENT APPLICATIONS[0001]This application is a continuation application of prior U.S. patent application Ser. No. 15 / 608,176, filed on May 30, 2017, the entire content of which is incorporated herein by reference, and this application claims the benefit of Korean Patent Application No. 2017-0017335 filed on Feb. 8, 2017 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.BACKGROUND OF THE INVENTION[0002]The present invention relates to a semiconductor treatment composition, and a treatment method that utilizes the semiconductor treatment composition.[0003]Chemical mechanical polishing (CMP) that is used to produce a semiconductor device is a technique that causes the processing target (polishing target) and a polishing pad to come in sliding contact with each other while pressing the processing target against the polishing pad, and supplying a chemical mechanical polishing aqueous dispersi...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/321H01L21/306
CPCH01L21/3212H01L21/30625H01L21/30604B24B49/16B24B37/042C09G1/02H01L21/02074H01L21/31133C09G1/00C09K3/14H01L21/304H01L21/02307C11D3/02C11D3/26C11D3/2075C11D2111/22
Inventor HAYAMA, TAKAHIROKAMEI, YASUTAKANISHIGUCHI, NAOKIKAMO, SATOSHISHINODA, TOMOTAKA
Owner JSR CORPORATIOON
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