Semiconductor Device, Display Module, and Electronic Appliance

a technology of semiconductor devices and display modules, applied in the direction of static indicating devices, solid-state devices, instruments, etc., can solve the problems of difficult to reduce a layout area, difficult to reduce the /l of transistors, and long etc., to achieve the effect of reducing the time required for changing the potential of nodes in circuits, reducing the drain current of transistors, and improving the effect of circuit stability

Inactive Publication Date: 2016-01-28
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a novel semiconductor device that can operate at high speed, reduce the layout area, and reduce the driving voltage. It also enables shortening of the rise time and fall time of signals.

Problems solved by technology

Therefore, the time required for change in a potential of a node in a circuit is long, and thus high-speed operation is difficult.
Furthermore, W / L of the transistor needs to be increased, which makes it difficult to reduce a layout area.
In addition, it is difficult to shorten the rise time and the fall time of a signal.

Method used

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  • Semiconductor Device, Display Module, and Electronic Appliance
  • Semiconductor Device, Display Module, and Electronic Appliance
  • Semiconductor Device, Display Module, and Electronic Appliance

Examples

Experimental program
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Effect test

embodiment 1

[0065]In this embodiment, a semiconductor device of one embodiment of the present invention will be described.

[0066]A structure of a semiconductor device of one embodiment of the present invention will be described with reference to FIG. 1. Note that one embodiment of the present invention is not limited to the structure described below.

[0067]A semiconductor device illustrated in FIG. 1 includes a circuit 100. The circuit 100 has a function of controlling the potential of a wiring 112 based on the potentials of a wiring 111, a wiring 113, a wiring 114, and a wiring 115. The circuit 100 outputs a signal based on the potentials of the wiring 111, the wiring 113, the wiring 114, and the wiring 115 to the wiring 112. The potential of the wiring 112 is controlled by the signal. As described above, the circuit 100 serves as a logic circuit or a sequential circuit.

[0068]The circuit 100 includes a transistor 101, a transistor 102, a transistor 103, a transistor 104, a capacitor 105, and a c...

embodiment 2

[0187]In this embodiment, a semiconductor device of one embodiment of the present invention is described.

[0188]A structure of a semiconductor device of one embodiment of the present invention is described with reference to FIG. 15. Note that one embodiment of the present invention is not limited to the structure described below.

[0189]A semiconductor device illustrated in FIG. 15 includes a circuit 200. The circuit 200 has a function of controlling potentials of N (N is a natural number of 3 or more) wirings 211 (also referred to as wirings 211[1] to [N]) based on potentials of a wirings 212, 213, 214, and 215. The circuit 200 outputs signals based on the potentials of the wirings 212, 213, 214, and 215 to the corresponding wirings 211[1] to [N]. The potentials of the wirings 211 [1] to [N] are controlled with the signals.

[0190]Specifically, based on the potentials of the wirings 212, 213, 214, and 215, the circuit 200 has a function of sequentially making the potentials of the wirin...

embodiment 3

[0200]In this embodiment, a display device of one embodiment of the present invention is described.

[0201]A structure of a display device of one embodiment of the present invention is described with reference to FIG. 19. Note that one embodiment of the present invention is not limited to the structure described below.

[0202]A display device illustrated in FIG. 19 includes a pixel portion 301, a scan line driver circuit 302, and a signal line driver circuit 303.

[0203]In the pixel portion 301, N scan lines GL (also referred to as scan lines GL [1] to [N]) and M (M is a natural number of two or more) signal lines SL (also referred to as signal lines SL [1] to [M]) are provided so as to intersect with each other. A pixel 310 is provided at each intersection.

[0204]The pixel 310 includes at least a display element and a transistor. Examples of a display element include a light-emitting element and a liquid crystal element. An example of a light-emitting element includes an EL element.

[0205]...

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Abstract

The circuit includes a first transistor; a second transistor whose first terminal is connected to a gate of the first transistor for setting the potential of the gate of the first transistor to a level at which the first transistor is turned on; a third transistor for setting the potential of a gate of the second transistor to a level at which the second transistor is turned on and bringing the gate of the second transistor into a floating state; and a fourth transistor for setting the potential of the gate of the second transistor to a level at which the second transistor is turned off. With such a configuration, a potential difference between the gate and a source of the second transistor can be kept at a level higher than the threshold voltage of the second transistor, so that operation speed can be improved.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]One embodiment of the present invention relates to a semiconductor device, a display module, and an electronic appliance.[0003]Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. In addition, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Another embodiment of the present invention relates to a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, or a driving method or manufacturing method thereof.[0004]2. Description of the Related Art[0005]A circuit which can be applied to a driver circuit of a memory device, an image sensor, a display device, or the like has been developed. In particular, a circuit ...

Claims

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Application Information

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IPC IPC(8): H01L27/12
CPCH01L27/124H01L27/1225G09G2310/0286G09G3/20G09G2300/0426H01L21/8226H01L27/0207H01L29/7869H01L27/1255G06F3/041G09G3/2092G09G2310/0267G09G2310/08G11C19/28G11C27/04
Inventor UMEZAKI, ATSUSHI
Owner SEMICON ENERGY LAB CO LTD
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