Low-temperature selective epitaxial growth of silicon for device integration

Abstract

An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.

Description

RELATED APPLICATION DATA[0001]This application is a divisional application of U.S. patent application Ser. No. 13 / 032,866 filed on Feb. 23, 2011, incorporated herein by reference in its entirety.BACKGROUND[0002]1. Technical Field[0003]The present invention relates to semiconductor processing and more particularly to a low temperature epitaxial growth process.[0004]2. Description of the Related Art[0005]Selective epitaxial growth (SEG) of highly doped silicon is suitable for applications in raised source / drain (S / D) regions to reduce parasitic series resistance associated with shallow-doped S / D regions. However, conventional methods for SEG of silicon require high temperature processing. The typical processing temperatures are greater than 600° C.[0006]The high temperature requirement limits the processes and applications which can utilize the conventional methods for SEG of Si. Further, conventional high temperature depositions (over 600 degrees C.) for epitaxial growth of silicon l...

AI Technical Summary

Benefits of technology

Enables high dopant activation and selective growth of silicon at reduced temperatures, facilitating applications in 3D integration and raised source / drain regions for transistors, while maintaining epitaxial quality and reducing defects.

Problems solved by technology

However, conventional methods for SEG of silicon require high temperature processing.

The high temperature requirement limits the processes and applications which can utilize the conventional methods for SEG of Si.

Further, conventional high temperature depositions (over 600 degrees C.) for epitaxial growth of silicon lack selective growth of Si on predetermined areas, e.g., where the c-Si is exposed.

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