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Silane or borane treatment of metal thin films

borane technology, applied in the direction of coatings, chemical vapor deposition coatings, semiconductor devices, etc., can solve the problems of affecting the workfunction of a given thin film or an entire stack, oxidation of a metal thin film can easily occur,

Active Publication Date: 2014-09-18
ASM IP HLDG BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent describes a method for making semiconductors more efficiently. The method involves using a titanium nitride layer as an etch stop layer and a metal-containing layer as a metal source. The metal-containing layer can be made of various metals and can be deposited using an atomic layer deposition process. It can also be contacted with a silane or borane compound during the deposition process. This method does not increase the thickness of the titanium nitride layer and can help improve the quality and efficiency of semiconductor production.

Problems solved by technology

Oxidation of a metal thin film can easily occur during many steps in processing, such as by exposure to atmospheric water or oxygen.
Oxidation poses a problem in that it can affect the workfunction of a given thin film or an entire stack.

Method used

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  • Silane or borane treatment of metal thin films
  • Silane or borane treatment of metal thin films
  • Silane or borane treatment of metal thin films

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Embodiment Construction

[0021]The present disclosure provides methods for reducing or preventing undesirable effects of oxidation in one or more thin films comprising metal. The thin films can be deposited using known vapor deposition processes, such as atomic layer deposition (ALD) or chemical vapor deposition (CVD) processes. In some embodiments the methods for reducing oxidation can comprise an oxygen barrier material or a preventative treatment applied to a deposited thin film. In some embodiments however, a protective treatment may be provided as a part of an ALD or CVD method used to form the thin film. A protective treatment may comprise exposing the film to be treated to a silane or a borane compound. The treatment may reduce or substantially prevent oxidation of the thin film and the possible buildup of oxygen at the interface of the thin film and an overlying layer.

[0022]Oxidation resistance is important in many contexts. For example, in a gate stack even a minor amount of oxygen in the stack cou...

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Abstract

The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or after deposition.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present application relates generally to processes for providing a protective treatment to metal thin films. In some embodiments, thin films used in metal gate and metal electrode applications in metal oxide semiconductor field effect transistors (MOSFETs), such as n-channel MOSFETs (NMOS) are treated either during or after deposition in order to prevent or reduce the effects of oxidation.[0003]2. Description of the Related Art[0004]Oxidation of a metal thin film can easily occur during many steps in processing, such as by exposure to atmospheric water or oxygen. In a multi-step fabrication process oxidation may occur between the deposition of each thin film, such as when transferring a wafer or substrate between deposition modules. Oxidation poses a problem in that it can affect the workfunction of a given thin film or an entire stack. And oxidation in one thin film may lead to oxidation of the interface between th...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/28H01L21/02
CPCH01L21/02186H01L21/28088H01L21/3105H01L21/321H01L29/4966H01L29/517H01L21/28562H01L21/76841C23C16/56Y10S438/932H01L21/02211H01L21/02271
Inventor SHERO, ERICHAUKKA, SUVI
Owner ASM IP HLDG BV
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