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Nanowire efuses

a technology of nanowires and fuses, applied in the direction of electrical equipment, semiconductor devices, semiconductor/solid-state device details, etc., can solve problems such as part-blown fuses

Inactive Publication Date: 2013-05-02
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent describes a method for creating an electrically programmable fuse by forming a wire between two pads on a substrate, adding a blocking structure around a portion of the wire, and depositing a metal layer on the wire and pads to create a metal compound. The metal compound fully penetrates the wire within the blocking structure. Another method involves forming a silicide wire that breaks by electromigration to create an electrical open when a threshold electrical signal is applied across the pads. The technical effect of this patent is the creation of a reliable and programmable electrical connection for use in electronic devices.

Problems solved by technology

However, existing efuse technologies have difficulty producing a fully “open” circuit, resulting instead in partially “blown” fuses.

Method used

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Embodiment Construction

[0028]Generally, electromigration is the movement of a conducting material that is caused by the flow of ions in the material when conducing electrons interact with diffusing metal atoms, resulting in a momentum transfer. In layman's terms, electromigration is caused by the electrons “dragging” the conducting material along with them as they move. Electromigration is a significant source of degradation in small-scale and high-voltage electronics, but this otherwise destructive effect can be employed to produce effective electrically programmable fuses (efuses).

[0029]The present principles allow for the deposition of a conducting layer on a nanowire. In an exemplary embodiment, the conducting layer may be a silicide or germanicide and the nanowire may be formed from silicon. Other possibilities for the nanowire material include pure germanium or SiGe. A deposition process is used that causes the conducting layer to infiltrate and / or replace the nanowire, such that a high voltage or c...

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Abstract

Electrically programmable fuses and methods for forming the same are shown that include forming a wire between a first pad and a second pad on a substrate, forming a blocking structure around a portion of the wire, and depositing a metal layer on the wire and first and second pads to form a metal compound, wherein the metal compound fully penetrates the portion of the wire within the blocking structure.

Description

BACKGROUND[0001]1. Technical Field[0002]The present invention relates to electrically programmable fuses and, and more particularly to electrically programmable fuses formed on nanowire structures.[0003]2. Description of the Related Art[0004]Electrically programmable fuses (efuses) employ electromigration effects to change the resistance of a circuit element. They stand distinct from laser-blown fuses, where a laser is used to modify the fuse structure. For example, applying a high voltage to an efuse changes the structure of the fuse, thereby programming or “blowing” the fuse. Efuses are advantageous over laser fuses because of the smaller chip area required and the fact that no special equipment (e.g., a laser tool) is needed to program them.[0005]Efuses can be particularly useful in allowing one-time setting of circuit states. For example, efuses may be used to set a serial number or to remove defective memory components from an array. However, existing efuse technologies have di...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/768
CPCH01L23/5256H01H2085/0283H01H2300/036H01L29/42392H01L29/785H01L29/0673H01L2924/0002H01L29/78696H01L2924/00
Inventor CHANG, JOSEPHINE B.LAUER, ISAACLIN, CHUNG-HSUNSLEIGHT, JEFFREY W.
Owner GLOBALFOUNDRIES INC
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