Semiconductor devices and methods for manufacturing the same

a technology of semiconductor devices and semiconductors, applied in semiconductor devices, semiconductor/solid-state device details, electrical apparatus, etc., can solve problems such as resistance-capacitance delay

Inactive Publication Date: 2012-04-12
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reduction in the line width of the gate electrode may cause a short channel effect and increase an electrical resistance of the gate electrode to cause a resistance-capacitance (RC) delay.

Method used

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  • Semiconductor devices and methods for manufacturing the same
  • Semiconductor devices and methods for manufacturing the same
  • Semiconductor devices and methods for manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021]Example embodiments will now be described more fully with reference to the accompanying drawings, in which example embodiments are shown. Example embodiments may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those of ordinary skill in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Like reference numerals in the drawings denote like elements, and thus their description will be omitted.

[0022]It will be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to anot...

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Abstract

Semiconductor devices and methods of manufacturing semiconductor devices. A semiconductor device includes a metal gate electrode stacked on a semiconductor substrate with a gate insulation layer disposed therebetween, spacer structures disposed on the semiconductor substrate at both sides of the metal gate electrode, source/drain regions formed in the semiconductor substrate at the both sides of the metal gate electrode, and an etch stop pattern including a bottom portion covering the source/drain regions and a sidewall portion extended from the bottom portion to cover a portion of sidewalls of the spacer structures, in which an upper surface of the sidewall portion of the etch stop pattern is positioned under an upper surface of the metal gate electrode.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims priority under 35 U.S.C. §119 to Korean Patent Application No. 10-2010-0097922, filed on Oct. 7, 2010, in the Korean Intellectual Property Office (KIPO), the entire contents of which is incorporated herein by reference.BACKGROUND[0002]1. Field[0003]Example embodiments relate to semiconductor devices and methods for manufacturing the same.[0004]2. Description of the Related Art[0005]A semiconductor device may include an integrated circuit provided with a plurality of metal oxide semiconductor field effect transistors (MOSFETs). As semiconductor devices are highly integrated, a line width of a gate electrode included in a MOS transistor is reduced. The reduction in the line width of the gate electrode may cause a short channel effect and increase an electrical resistance of the gate electrode to cause a resistance-capacitance (RC) delay.[0006]To solve an increase problem in the sheet resistance and contact resistance...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/772
CPCH01L21/823425H01L21/823468H01L21/823475H01L29/7843H01L29/6656H01L29/6659H01L29/7833H01L29/66545H01L2924/0002H01L2924/00H01L27/092H01L23/535H01L29/0847H01L29/1608H01L29/165H01L29/45H01L29/7848H01L29/41783
Inventor PARK, SANGJINEYOON, BOUNHAN, JEONGNAM
Owner SAMSUNG ELECTRONICS CO LTD
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