Three-dimensionally integrated semicondutor device and method for manufacturing the same

Abstract

A wiring substrate has, on each of opposite faces thereof, connection pad portions to which various circuit elements are connected, and wiring traces for connecting the connection pad portions. The wiring substrate also has a through wiring portion for establishing mutual connection between the connection pad portions and the wiring traces on the front face and those on the back face. A post electrode component is formed such that it includes a plurality of post electrodes supported by a support portion. A semiconductor chip is attached to the back face of the wiring substrate, and is connected to the connection pad portions on the back face. After the post electrode component is fixed to and electrically connected to the wiring traces at predetermined positions, and resin sealing is performed, the support portion is separated so as to expose end surfaces of the post electrodes or back face wiring traces connected thereto. Another circuit element is disposed on the front face of the wiring substrate, and is connected to the connection pad portions on the front face.

Description

TECHNICAL FIELD[0001]The present invention relates to a three-dimensionally integrated semiconductor device in which various circuit elements, including a semiconductor chip, are attached to opposite faces of a wiring substrate, and to a method for manufacturing the same.BACKGROUND ART[0002]High-frequency characteristics are very important for an RF (radio frequency) module or the like used in cellular phones. The High-frequency characteristics of such a module are most sensitively affected by wiring between terminals of a semiconductor (LSI) chip and external components. Conventional wiring is long; i.e., each wiring line extends through LSI chip bonding wire, a package substrate, and a post electrode to a terminal of a component. In the case of an RF module, although the amount of wiring within the module is large, it is sufficient for the module to have a small number of external connection terminals. Although a conventional typical module technique can form multilayer wiring on ...

AI Technical Summary

Benefits of technology

[0012]According to the present invention, planar integration can be readily changed to three-dimensional integration, and signal paths (an LSI chip—a wiring substrate—circuit elements) can be shortened in order to improve high-frequency characteristics. Thus, the performance of an RF (radio frequency) module can be improved, and the installation area thereof can be reduced, whereby high density mounting and enhancement of the performance of small-sized electronic equipment such as cellular phones become possible. The high density mounting can reduce the size and cost of equipment.

[0013]Furthermore, according to the present invention, the side surfaces of the post electrodes can be exposed. Therefore, solder fillets can be formed on the side surfaces, whereby the mounting strength can be increased considerably.

Problems solved by technology

Although a conventional typical module technique can form multilayer wiring on the side toward the substrate of a package so as to increase the amount of wiring, in general, the conventional technique encounters difficulty in forming a large amount of wiring on the post electrode side.

However, the illustrated semiconductor device has a complicated structure, and requires a complicated process especially for a connection structure for establishing connection between the wiring patterns provided on the wiring substrate and the mother substrate, respectively.

; that is, requires facilities similar to those used in the former stage, and cannot be performed by use of only conventional facilities for the latter stage.

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