Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Light-emitting device containing a composite electroplated substrate

Inactive Publication Date: 2010-02-04
EPISTAR CORP
View PDF5 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0015]In one embodiment of the present application, a light-emitting diode comprises a multiple-film layer stacked alternately by multiple high strength films and multiple

Problems solved by technology

However, due to the difference of the thermal expansion coefficients of materials, the light-emitting diode wafer often cracks during the manufacturing which influences the wafer life-time indirectly.
However, the high temperature process does not suit for light-emitting diode chip manufacturing.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light-emitting device containing a composite electroplated substrate
  • Light-emitting device containing a composite electroplated substrate
  • Light-emitting device containing a composite electroplated substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020]The first embodiment of the present application is illustrated in FIG. 1A to FIG. 1F. Referring to FIG. 1A, a growth substrate 101 is provided. A semiconductor epitaxy structure 105 is formed on the growth substrate, included at least a first conductivity type semiconductor layer 102, an active layer 103, and a second conductivity type semiconductor layer 104. In this embodiment, the first conductivity type semiconductor layer 102 is an n-GaN layer, the active layer 103 is an InGaN / GaN multiple quantum wells structure, and the second conductivity type semiconductor layer 104 is a p-GaN layer. The semiconductor epitaxy structure 105 is formed on sapphire by the epitaxy technology. The reflective layer 106 is formed on the semiconductor epitaxy structure 105 as a stack of titanium (thickness is 30 nm) / aluminum (thickness is 200 nm). It can also be as a stack of titanium / gold or titanium / silver.

[0021]Referring to FIG. 1B, a seed layer 107 is formed on the reflective layer 106 to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application claims the right of priority based on Taiwan Patent Application No. 097129481 entitled “A Light-Emitting Device Containing a Composite Electroplated Substrate”, filed on Aug. 1, 2008, which is incorporated herein by reference and assigned to the assignee herein.TECHNICAL FIELD[0002]The present application generally relates to a light-emitting device, and more particularly to a light-emitting diode comprising a composite electroplated substrate.BACKGROUND[0003]The vertical type light-emitting diodes (LEDs) become a popular choice to light-emitting diodes package for its simple design, high power, high efficiency, and long life-time. To optimize the heat dispersion, the light-emitting diodes are usually attached to the metal substrate by bonding technology, or by electroplating technology to evaporate metal film on the epitaxy layers. However, due to the difference of the thermal expansion coefficients of materials, the lig...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/00
CPCH01L33/0079H01L33/46H01L33/405H01L33/0093
Inventor HSU, CHIA-LIANGHSIEH, MIN-HSUNLU, CHIH-CHIANGHUANG, CHIEN-FU
Owner EPISTAR CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com