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Vehicle, display device and manufacturing method for a semiconductor device

a display device and semiconductor technology, applied in the field of semiconductor devices, can solve the problems of low heat resistance of plastic film, easy cracking and heavy above the substrate, and inability to use glass substrates and large size quartz substrates, etc., to achieve a wide field of vision, simple installation process, and the effect of reducing the open space within the train

Inactive Publication Date: 2008-02-28
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a semiconductor device with a curved surface, such as a display or a light emitting device, and a manufacturing method thereof. The method includes steps of forming a layer to be peeled off containing an element on a substrate, attaching a support to the layer to be peeled off, and peeling off the support from the substrate using physical means. The invention also provides a semiconductor device with a curved surface, where the direction of the channel length directions of the channels is the same as the direction of the curved surface of the base, and a manufacturing method thereof. The invention also provides a method of peeling off a layer containing an element from a substrate using a transfer body with a curved surface. The invention also provides a method of peeling off a layer containing an element from a substrate using a separation layer and laser light. The technical effects of the invention include minimizing deformation of the elements and maintaining the characteristics of the elements, as well as providing a semiconductor device with a curved surface and a manufacturing method thereof.

Problems solved by technology

However, there is a defect that the above substrate is easy to crack and heavy.
In addition, in the case of mass production, it is difficult and thus not suitable to use a large size glass substrate and a large size quartz substrate.
However, the plastic film has a low heat resistance, so that it is necessary to reduce a maximum temperature of a process.
Therefore, a liquid crystal display device and a light emitting element for which the plastic film is used and which each have a high performance are not realized.
Since the display has been a flat one up to now, space in vehicles has been narrowed, or, complicated operations for embodying a flat display, such as operations for cutting off the walls, attaching and the like have been required.

Method used

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  • Vehicle, display device and manufacturing method for a semiconductor device
  • Vehicle, display device and manufacturing method for a semiconductor device
  • Vehicle, display device and manufacturing method for a semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

embodiment 1

[0096] Here, an example of laser processing apparatus applicable to the present invention will be described.

[0097] Crystallization of amorphous silicon by laser annealing is conducted through a melting-solidification process. More specifically, the case where it is divided into two stages, that is, a stage of generation of crystal nucleus and a stage of crystal growth from the nucleus is considered However, in the case of laser annealing using a pulse laser beam, a generation position of crystal nucleus and a generation density thereof cannot be controlled but left to natural generation. Thus, a crystal grain is formed at an arbitrary position within the surface of a glass substrate and only a small size of about 0.2 μm to 0.5 μm is obtained. A large number of defects are caused in a crystal boundary. This is considered to be a factor limiting the field effect mobility of a TFT.

[0098] It is considered that a method of conducting crystallization with melting-solidification by conti...

embodiment 2

[0128] The example of the top gate TFT is descried in Embodiment 1. Here, an example of a bottom gate TFT will be described. Also, the structure except for the TFT is the same one as Embodiment 1 and the description is thereof omitted here.

[0129] Next, steps of crystallizing a non-single crystalline semiconductor film and producing a TFT from the formed crystalline semiconductor film will be descried with reference to FIGS. 7A to 7D.

[0130]FIG. 7B is a longitudinal cross sectional view. A non-single crystalline semiconductor film 503 is formed on a gate insulating film 506 covering a gate electrode. A typical example of the non-single crystalline semiconductor film 503 is an amorphous silicon film. In addition, an amorphous silicon germanium film or the like can be applied. The thickness of 10 nm to 200 nm can be applied and may be further increased in accordance with a wavelength of a laser beam and an energy density thereof. In addition, it is desirable to employ such a measure t...

embodiment 3

[0142] In accordance with the present embodiment, FIG. 8 shows a technique for transferring a layer to be peeled containing TFT.

[0143] In FIGS. 8A to 8G, reference numeral 830 indicates a first substrate; reference numeral 831 indicates a first material layer composed of a nitride layer or a metallic layer; reference numeral 832 indicates a second material layer composed of an oxide layer; reference numeral 833 indicates a layer to be peeled; reference numeral 834 indicates a first adhesive; reference numeral 835 indicates a second substrate; reference numeral 836 indicates a second adhesive; and reference numeral 837 indicates a third substrate.

[0144] In accordance with the present embodiment, the first substrate 830 may be constituted by a glass substrate, a quartz substrate, a ceramic substrate or the like. Further, it is also possible to use a semiconductor substrate such as a silicon substrate, or a metallic substrate such as a stainless steel substrate. Here, a glass substra...

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PUM

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Abstract

To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor device having a circuit composed of thin film transistors (hereinafter referred to as TFTs) transferred by bonding a layer to be peeled off to a base member. More particularly, the present invention relates to an electro-optical device which is represented by a liquid crystal module, a light emitting device which is represented by an EL module, and electronic equipment on which such a device is mounted as a part. Further, the present invention relates to a manufacturing method of all these devices and apparatuses mentioned above. [0003] Note that a semiconductor device in this specification indicates general devices functioning by utilizing semiconductor characteristics, and an electro-optical device, a light emitting device, a semiconductor circuit, and electronic equipment are all semiconductor devices. [0004] 2. Description of the Related Art [0005] In recent years...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B60Q1/00B60Q1/26H01J1/62H01L23/50H01L21/762H01L27/32
CPCB60R2300/202H01L27/3244B60R2300/802B60R2011/004B60R11/0229B60R11/04H01L21/76251B60R1/00Y02E10/549Y02P70/50H10K59/12B60K35/00H01L23/50B60K35/60H10K59/1201H10K71/80H01L21/6835H01L27/1218H01L27/1266H01L2221/68318H01L2221/6835H01L2221/68363H01L2221/68386
Inventor TAKAYAMA, TORUMARUYAMA, JUNYAGOTO, YUUGOKUWABARA, HIDEAKIYAMAZAKI, SHUNPEI
Owner SEMICON ENERGY LAB CO LTD
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