SLM Lithography: Printing to below K1=.30 without previous OPC processing

Abstract

Previously disclosed methods and devices are extended in this application by two-dimensional analysis of optical proximity interactions and by fashioning a computationally efficient kernel for rapid calculation of adjustments to be made. The computations can be made in realtime, whereby the use of OPC assist features can be reduced, with substantial savings in file size and computational requirements. Further aspects of the invention are disclosed in the descriptions, figures, claims and documents incorporated by reference.

Description

PRIORITY INFORMATION [0001] This application claims the benefit of U.S. Provisional Application No. 60 / 776,275, entitled “SLM Lithography: Printing to Below k1=0.30 Without Previous OPC Processing” filed on 24 Feb. 2006 naming inventors Torbjorn Sandstrom and Igor Ivonin. This application continues in part International Application No. PCT / SE2006 / 000932, entitled “Method and Apparatus for Projection Printing,” filed on 8 Aug. 2006, published in English as WO / 2007 / 018464 and designating the U.S., which International Application claims the benefit of U.S. Provisional Application No. 60 / 706,550, entitled “Method and Apparatus for Projection Printing,” filed on 8 Aug. 2005 naming inventors Igor Ivonin and Torbjorn Sandstrom. The priority documents are hereby incorporated by reference as if set forth in full.FIELD OF THE INVENTION [0002] There are two aspects to the technology disclosed: First, a method and device with a reduced field of interaction, which simplifies and reduces the need...

AI Technical Summary

Benefits of technology

[0010] Previously disclosed methods and devices are extended in this application by two-dimensional analysis of optical proximity interactions and by fashioning a computationally efficient kernel for rapid calculation of adjustments to be made. The computations can be made concurrently with rasterizing or even in realtime, whereby the use of OPC assist features can be reduced, with substantial savings in file size and computational requirements. Further aspects of the invention are disclosed in the descriptions, figures, claims and documents incorporated by reference.

Problems solved by technology

Aberrations can be reduced by design, but the influence of diffraction of the light due to its finite wavelength puts a limit to the resolution and fidelity that can be achieved.

Because of the strong economic forces towards smaller and more numerous features on the workpiece, the optics used in lithographic processes are extremely well designed and limited only be the underlying physics, i.e., diffraction.

But for technical purposes, this fall-off means size errors for everything close to the resolution limit and the smallest features that can be printed with good fidelity are far larger than the resolution limit.

The OPC processing can be done using specialized software running on computer farms and still take several hours or even days.

Correcting for the effects of the printing on the wafer adds cost, overhead and lead time.

At the 90 and 65 nm design nodes, pattern data files may be 50 Gbyte or more in size and even the transmission and storage of the files becomes a burden to the design houses and mask shops.

Adding one more layer of OPC corrections for the printing of the mask in an SLM-based pattern generator would add more cost, overhead and make the lead time even longer.

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