Semiconductor device having a plurality of semiconductor constructs

Abstract

A semiconductor device includes a plurality of semiconductor constructs, each of the semiconductor constructs including a semiconductor substrate and external connection electrodes provided on an upper surface of the semiconductor substrate. The semiconductor substrates of the semiconductor constructs are different in a planar-size. The plurality of semiconductor constructs are stacked from bottom to top in descending order of planar-sizes of the semiconductor substrates included in the plurality of semiconductor constructs. An insulating film at least is provided around one semiconductor construct disposed on the top of the plurality of semiconductor constructs and on another semiconductor construct disposed under the one semiconductor construct. Each of the upper surfaces of the plurality of external connection electrodes is exposed from the one semiconductor construct and from the insulating film.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is based upon and claims the benefit of priority from prior Japanese Patent Application No. 2006-002017, filed Jan. 10, 2006, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]This invention relates to a semiconductor device in which a plurality of semiconductor constructs are stacked.[0004]2. Description of the Related Art[0005]In a conventional semiconductor device, a first semiconductor construct is stacked on a base board, and a second semiconductor construct having a planar-size smaller than that of the first semiconductor construct is stacked on a part of the first semiconductor construct. A plurality of external connection electrodes are provided in a peripheral area of the upper surface of the first semiconductor construct which is exposed without being covered by the second semiconductor construct, and a plurality of external connecti...

AI Technical Summary

Benefits of technology

[0034]According to this invention, since all the upper surfaces of the plurality of external connection electrodes are exposed on the one semiconductor construct and on the insulating film, the electrical connection wiring lines are mainly in a thickness direction of the semiconductor construct. Thus, the length of the wiring lines is reduced to make it possible to adapt to use at a high frequency. Further, heat can be released via the external connection electrodes of the semiconductor construct, so that the heat releasing properties can be improved. Moreover, costs can be reduced because a base board (interposer) having vertical conductors as heretofore used is not used.

Problems solved by technology

The conventional semiconductor device described above has the following problems due to the connection by the bonding wires.

That is, the diameter of the bonding wire is generally small because costs increase if the diameter of the bonding wire made of gold is relatively large, and the impedance of the bonding wire is high because the bonding wire is relatively long, which makes it impossible for the bonding wire to adapt to use at a high frequency.

Further, the bonding wire hardly has heat releasing properties, and the heat releasing properties of the first and second semiconductor constructs therefore become worse.

Moreover, since the base board (interposer) having the vertical conductors is used, costs increase.

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