Use of chlorine to fabricate trench dielectric in integrated circuits

Abstract

Chlorine is incorporated into pad oxide (110) formed on a silicon substrate (120) before the etch of substrate isolation trenches (134). The chlorine enhances the rounding of the top corners (140C) of the trenches when a silicon oxide liner (150.1) is thermally grown on the trench surfaces. A second silicon oxide liner (150.2) incorporating chlorine is deposited by CVD over the first liner (150.1), and then a third liner (150.3) is thermally grown. The chlorine concentration in the second liner (150.2) and the thickness of the three liners (150.1, 150.2, 150.3) are controlled to improve the corner rounding without consuming too much of the active areas (140).

Description

CROSS REFERENCE TO RELATED APPLICATIONS [0001] The present application is a division of U.S. patent application Ser. No. 11 / 174,081 filed on Jun. 30, 2005, incorporated herein by reference.BACKGROUND OF THE INVENTION [0002] The present invention relates to integrated circuits, and more particularly to dielectric formed in trenches in a silicon substrate. Some embodiments are suitable for substrate isolation for integrated circuits. [0003]FIG. 1 illustrates an intermediate structure in a flash memory fabrication process using shallow trench isolation (STI). Silicon dioxide 110 (“pad oxide”) is thermally grown on silicon substrate 120. Silicon nitride 130 is formed on oxide 110 and patterned photolithographically to define substrate isolation trenches 134 to be formed between active areas 140. Oxide 110 and substrate 140 are etched through the openings in nitride 130 to form the isolation trenches. Silicon dioxide 150 is deposited to fill the trenches and cover the wafer. Oxide 150 is...

AI Technical Summary

Benefits of technology

[0009] Some embodiments of the present invention incorporate chlorine into pad oxide 110. It is well known that chlorine increases oxygen diffusion through silicon dioxide. Chlorine has also been used in silicon dioxide layers, at a concentration of at most three atomic percent, to immobilize metal atoms. In some embodiments of the present invention, chlorine incorporation into pad oxide 110 increases the oxygen diffusion through oxide 110 during the liner formation. This oxygen diffusion increases the oxidation rate at corners 410C relative to the trench sidewalls, to create a desired rounded corner profile.

[0011] In some embodiments, the oxidation time is shortened to prevent undue consumption of the active area. Hence the liner is very thin (3˜10 nm in some embodiments). After the liner formation, a second oxide liner is deposited by chemical vapor deposition (CVD), and then a third liner is thermally grown. The CVD liner protects the active areas from excessive oxidation when the third liner is being formed, but the corner rounding can be enhanced during the third liner fabrication. In some embodiments, chlorine is incorporated into the CVD liner to speed up oxidation of the trench sidewall and bottom surfaces during the third liner fabrication and provide a desired corner profile. The CVD liner can be used with or without chlorine incorporation into pad oxide 110.

Problems solved by technology

The oxide thinning further increases the electric field at the corners, creating overerase and / or other problems (depending on the memory operation).

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