Fabrication of lean-free stacked capacitors

Abstract

For fabricating lean-free stacked capacitors, openings are formed through layers of materials including a layer of support material displaced from a bottom of the openings. A respective first electrode is formed for a respective capacitor within each of the openings. The layer of support material is patterned to form support structures around the first electrodes. Masking spacers are formed around exposed top portions of the first electrodes, and exposed portions of the support material are etched away to form the support structures. Such stacked capacitors are applied within a DRAM (dynamic random access memory).

Description

CROSS-REFERENCE TO RELATED APPLICATION(S) [0001] The present application is a divisional of an earlier filed copending patent application with Ser. No. 10 / 853,628 filed on May 25, 2004, for which priority is claimed. This earlier filed copending patent application with Ser. No. 10 / 853,628 is in its entirety incorporated herewith by reference. [0002] The present application claims priority under 35 U.S.C. § 119 to Korean Patent Application No. P2004-8770, filed on Feb. 10, 2004, which is incorporated herein by reference in its entirety. A certified copy of Korean Patent Application No. P2004-8770 is contained in the parent copending patent application with Ser. No. 10 / 853,628.TECHNICAL FIELD [0003] The present invention relates generally to integrated circuit fabrication, and more particularly, to fabrication of lean-free stacked capacitors that may be used for DRAM (dynamic random access memory). BACKGROUND OF THE INVENTION [0004]FIG. 1 shows a simplified schematic of a DRAM (dynami...

AI Technical Summary

Benefits of technology

[0025] In this manner, the support structures for preventing leaning of the first electrodes of the stacked capacitors are formed after the first electrodes are fabricated within the openings. Thus, less subsequent etching steps do not deteriorate the structural integrity of the support structures. In addition, because the first electrodes are available for forming the support structures, masking spacers are formed using the first electrodes for easily patterning the support structures around the first electrodes.

Problems solved by technology

Such exposed and leaning electrodes 116 and 122 when disposed close enough together may disadvantageously contact each-other during fabrication resulting in malfunction of the DRAM.

Thus, the width and the thickness of the support beams 146 are more difficult to control in the prior art.

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